Results 261 to 270 of about 12,730 (315)

ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

Mathematical Models and Methods in Applied Sciences, 2002
The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions are also discussed.
Qiu, Youchun, Zhang, Kaijun
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Methods and tools for characterisation of semiconductor device models

1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 2002
Rapid developments in semiconductor technologies create new needs for devices characterisation and modelling methods. In this paper we present a characterisation and modelling methodology which provides accurate device models for computer-aided design and necessary feedback for technology process analysis.
Agnieszka Konczykowska, Wlodek M. Zuberek   +1 more
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Numerical algorithms for modelling microwave semiconductor devices

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1995
AbstractThis paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter–Gummel formulation is presented which is compatible with drift diffusion and energy‐transport ...
COLE, EAB, SNOWDEN, CM
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On Modelling of Inhomogeneous Semiconductor Devices

Physica Status Solidi (a), 1993
The nonequilibrium electron and hole density equations for the modelling of inhomogeneous semiconductor devices are reexamined. The electron and hole densities are expressed in terms of their modified effective density of states parameters. These parameters are calculated for the case of parabolic band structure and constant relaxation time.
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Rigorous modeling of high-speed semiconductor devices

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668), 2004
Abstract We present a review of industrial heterostructure devices based on SiGe/Si and III–V compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed.
Vassil Palankovski, Siegfried Selberherr
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Massively parallel methods for semiconductor device modelling

Computing, 1996
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
R. K. Coomer, Ivan G. Graham
openaire   +1 more source

Noise modeling of semiconductor devices

6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003., 2004
Small-signal noise models for semiconductor devices, such as diodes, bipolar junction transistors and field effect transistors, have been synthesized in this paper. The modeling has been performed on the basis of mathematical equations. The models take into consideration all kinds of noises: thermal noise, shot noise, and flicker noise. The models have
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Power semiconductor device modeling with Model Architect

COMPEL 2000. 7th Workshop on Computers in Power Electronics. Proceedings (Cat. No.00TH8535), 2002
A new modeling environment for the creation, testing and validation of HDL-based models is presented. The environment is designed to support the generation of multiple hardware description languages including MAST, VHDL-AMS and Verilog-AMS. The software architecture and feature set of the environment is described.
H.A. Mantooth, J.P. Skudlarek, J.R. Carlson, D.K. Cooper, I.E. Getreu, G. Graham, S. Pothier, R. Vedam, C.M. Wolff   +8 more
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Modelling of Semiconductor Structures and Devices

Physica Scripta, 1981
The physical modelling is based on the solving of partial differential equations. Analytical solutions are only possible by extreme simplifications, for more accurate results numerical methods must be used. One way of the possible numerical solving is the discretization based upon mathematical considerations.
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Mathematical Model of Semiconductor Devices

2014
This chapter describes the reasoning that leads from the single-particle Schrodinger equation for an electron in a crystal to the mathematical model of semiconductor devices. The latter is a set of equations describing the evolution in space and time of a number of average quantities of interest: with reference to the electrons of the conduction band ...
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