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On uniqueness of solutions to the drift-diffusion-model of semiconductor devices
Mathematical Models and Methods in Applied Sciences, 1994We prove a uniqueness result for the drift-diffusion model of semiconductor devices under weak regularity assumptions. Our proof rests on the convexity of the free energy functional and uses a new concavity argument.
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SEMICONDUCTOR DEVICE PHYSICS AND THE MODELING OF SMALL SEMICONDUCTOR DEVICES
1997S. E. LAUX, M. V. FISCHETTI
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An extended hydrodynamic model for silicon semiconductor devices
1997A set of closed hydrodynamic-like equations is derived from Boltzmann’s Transport Equation describing charge transport in semiconductors. The moment hierarchy is closed by using the entropy principle and the model is compared with homogeneous Monte Carlo simulations for silicon.
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Numerical modelling of multilayer semiconductor devices
1990DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ...
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Modelling and Semiconductor Devices
2019 International Semiconductor Conference (CAS), 2019openaire +1 more source
Simulation and Modeling of Silicon Semiconductor Devices and Sensors
2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 2023Mike Schwarz +4 more
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Modelling & Semiconductor Devices
2023 International Semiconductor Conference (CAS), 2023openaire +1 more source