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Electron Devices on Piezoelectric Semiconductors: A Device Model
IEEE Transactions on Sonics and Ultrasonics, 1984The effects of acoustic waves on the terminal characteristics of electron devices on piezoelectric semiconductors are considered. The piezoelectric displacement charge is regarded as a time- and space-vary ing perturbation of the doping density of the semiconductor.
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Thermal models for semiconductor device simulation
HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372), 2003We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed is functions of the lattice temperature and in the case of semiconductor alloys of the material composition.
V. Palankovski, S. Selberherr
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Traditional Modelling of Semiconductor Devices
1995The study of semiconductor devices spans less than 50 years and the evolution of modelling techniques occupies an even shorter interval. Traditionally, the electrical properties of semiconductor devices have been modelled using equivalent circuit models, where the electrical behaviour of the device at the connecting terminals is represented by a ...
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Volterra Integral Equation Models for Semiconductor Devices
Mathematical Methods in the Applied Sciences, 1996One possibility of modelling semiconductor devices are the van Roosbroeck drift-diffusion equations, a nonlinear system of partial differential equations for the electrostatic potential and the spatial densities of the electrons and holes in the device.
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ESD Models and Measurement for Semiconductor Device
2006 7th International Conference on Electronic Packaging Technology, 2006Along with the development of technology, semiconductor devices, such as IC and LED, have got wide applications in electronic industry. Semiconductor devices are ESD sensitive. ESD would sometimes cause breakdown and destroy the devices. ESD can also cause indiscoverable soft breakdown that is a hidden trouble and would affect the quality, usage life ...
Zhijun Guo +3 more
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Mathematical Modeling of Semiconductor Devices
1986In this Chapter we shall formulate the system of partial differential equations, which describes potential distribution, carrier concentrations and current flow in semiconductor devices. We shall supplement the system by boundary conditions representing the interaction of the device with the outer world and discuss the modeling of physical parameters ...
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On uniqueness of solutions to the drift-diffusion-model of semiconductor devices
Mathematical Models and Methods in Applied Sciences, 1994We prove a uniqueness result for the drift-diffusion model of semiconductor devices under weak regularity assumptions. Our proof rests on the convexity of the free energy functional and uses a new concavity argument.
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Journal of Computational and Theoretical Nanoscience, 2008
D. Vasileska +4 more
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D. Vasileska +4 more
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