Results 121 to 130 of about 86,576 (325)

Phase Change Material‐Driven Tunable Metasurface for Adaptive Terahertz Sensing and Communication in 6G Perceptive Networks

open access: yesAdvanced Functional Materials, EarlyView.
This study explores the benefits of metasurfaces made from functional materials, highlighting their ability to be adapted and improved for various high‐frequency applications, including communications and sensing. It first demonstrates the potential of these functional material‐based metasurfaces to advance the field of sub‐THz perceptive networks ...
Yat‐Sing To   +5 more
wiley   +1 more source

Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device

open access: yesKongzhi Yu Xinxi Jishu, 2016
The direct reason of power semiconductor device failure from mechanical stress is that outside stress comes bigger than the strength of the device, which indirectly causes upload of electricity stress or heat stress and ultimately brings about failure of
ZHANG Xiying, YAN Ji, REN Yadong
doaj  

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

open access: yesAdvanced Electronic Materials
A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric
Jiajie Yu   +11 more
doaj   +1 more source

Dual ohmic contact to N- and P-type silicon carbide [PDF]

open access: yes, 2013
Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed.
Okojie, Robert S.
core   +1 more source

Multiband Switchable Microwave Absorbing Metamaterials Based on Reconfigurable Kirigami–Origami

open access: yesAdvanced Functional Materials, EarlyView.
A reconfigurable metamaterial featuring tunable microwave‐absorbing and load‐bearing performance is proposed. Stretchable kirigami and bistable origami configurations are integrated as actuating components, and the synergistic deformation mechanisms are systematically analyzed.
Weimin Ding   +7 more
wiley   +1 more source

Ice Lithography: Recent Progress Opens a New Frontier of Opportunities

open access: yesAdvanced Functional Materials, EarlyView.
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang   +9 more
wiley   +1 more source

Review of gate driver integrated gate-oxide health monitoring for SiC MOSFETs: Methods, challenges, and perspectives

open access: yesPower Electronic Devices and Components
The reliability issue of gate oxide of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is still a bottleneck for its wide spread in high-efficiency, high-temperature, and high-frequency power electronics applications ...
Kun Tan   +6 more
doaj   +1 more source

Near‐Infrared Organic Photovoltaic Electrodes for Subretinal Neurostimulation

open access: yesAdvanced Functional Materials, EarlyView.
Organic photovoltaic electrodes based on the D18:Y6 blend enable precise and light‐controlled activation of retinal ganglion cells in a degenerating retina. NIR Light‐driven activation of retinal ganglion cells, tunable stimulation parameters, and biocompatibility with human retinal organoids highlight their potential for next‐generation prosthetics ...
Andrea Corna   +10 more
wiley   +1 more source

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

open access: yes, 2008
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A.   +12 more
core   +1 more source

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