Results 201 to 210 of about 86,576 (325)
Anion‐excessive gel‐based organic synaptic transistors (AEG‐OSTs) that can maintain electrical neutrality are developed to enhance synaptic plasticity and multistate retention. Key improvement is attributed to the maintenance of electrical neutrality in the electrolyte even after electrochemical doping, which reduces the Coulombic force acting on ...
Yousang Won +3 more
wiley +1 more source
Wettability-Controlled Hydrophobic Coating of CMP Component Using PTFE and DLC for Mitigating Slurry Agglomeration and Contamination. [PDF]
Lee E +7 more
europepmc +1 more source
Semiconductor Power Devices: Physics, Characteristics, Reliability [Book Review] [PDF]
Leo Lorenz
openalex +1 more source
The characteristics of a vertical floating gate heterostructure transistor device that exhibits neuromorphic potentiation under visible light illumination are investigated. Due to spectrally‐tuned absorbance properties of each thin film layer and introduction of tunneling dielectric, the device enables wavelength‐selective tuning of synaptic plasticity
Seungme Kang +12 more
wiley +1 more source
Advancing 2D CMOS electronics with high-performance p-type transistors. [PDF]
Jiang J +6 more
europepmc +1 more source
Prediction of power semiconductors devices reliability working in cyclic mode [PDF]
E. V. Kravchenko +1 more
openalex +1 more source
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi +7 more
wiley +1 more source
Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]
Ghosh R, Saha P.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

