Results 241 to 250 of about 2,771,177 (302)

Single-Atom and Subnanocluster Platforms for Next-Generation Clinical Practice: A Bench-to-Bedside Approach. [PDF]

Chem Asian J
Mondal S, Sahoo P.
europepmc   +1 more source

High-Output-Current Boron-Doped Single-Crystal Diamond MOSFETs with a Thin Boron-Doped Epitaxial Layer. [PDF]

Nanomaterials (Basel)
Wang J, Wang R, Qu L, Chen G, Wen F, Wang H.   +5 more
europepmc   +1 more source

Self-Powered Neuromorphic Systems Based on Tribotronics Synaptic Devices. [PDF]

Small
Shrestha K, Akbari MK, Anbari AP, Pandey P, Zhuiykov S.   +4 more
europepmc   +1 more source

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Elements of semiconductor-device reliability

Proceedings of the IEEE, 1974
Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality.
C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek   +4 more
exaly   +2 more sources

Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
openaire   +3 more sources

The reliability of semiconductor devices in the bell system

Proceedings of the IEEE, 1974
The history of reliability of semiconductor devices in the Bell System is a story of sequential application of principles-first, of reliability-enhancing processing principles, which are applied in the absence of completely knowledgeable design and testing control; second, of testing-control principles, which follow growing knowledge of process defects
D.S. Peck, C.H. Zierdt
exaly   +2 more sources

Durability and Reliability of Semiconductor Devices

MRS Proceedings, 1998
AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved.
V. G. Sidorov, V. I. Sokolov, D. V. Sidorov   +2 more
openaire   +2 more sources

Paralleling of IGBT Power Semiconductor Devices and Reliability Issues

Electronics (Switzerland), 2023
Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications.
Ravi Tripathi, Ichiro Omura
exaly   +2 more sources

Integrating Semiconductor Device Characterisation and Reliability into Electrical Engineering Education

International Journal of Electrical Engineering and Education, 2006
Semiconductor device reliability physics and testing have been successfully integrated into a semiconductor device fabrication course as supplementary contents, to embody more comprehensively the challenges and concerns of the semiconductor industry.
Yang, Hong, Yuan, Jiann S.
exaly   +3 more sources

A reliability appraisal of semiconductor devices

Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1959
The current problems of assessing the reliability of semiconductor devices are discussed, and reference is made to the order of reliability required in typical applications.The evidence from life tests carried out on devices drawn from production lines of transistors and diodes shows how variations in operating conditions and assessment levels affect ...
R. Brewer, W.W.D. Wyatt
openaire   +1 more source