Results 251 to 260 of about 2,771,177 (302)

Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
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Reliability of compound semiconductor devices

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2002
This paper reviews the reliability problems of compound semiconductor devices. These devices suffer from specific failure mechanisms, which are related to their limited maturity. Only the GaAs MESFETs exhibit a stable technology and an assessed reliability. The metallizations employed in HEMTs already benefit from this assessment.
F. Fantini, L. Cattani, D. Dieci
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Reliability of semiconductor devices

Physics in Technology, 1976
Report on Metallization systems for semiconductor devices, 13 February 1976 Imperial College, London.
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Reliability Testing of Semiconductor Devices in a Humid Environment

Journal of the IEST, 1993
The influence of humidity on semiconductor device reliability is investigated with two main purposes: to emphasize the role of humidity in the failure process as a stress factor and to model the reliability-humidity relationship. Experiments were performed on two types of plastic encapsulated semiconductor devices (optoelectronic and ICs).
M. Bazu, M. Tazlauanu
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ICMAT 2011 – Reliability and variability of semiconductor devices and ICs

Microelectronics Reliability, 2012
Abstract not available in fulltext.
Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou   +4 more
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Reliability assessment of power semiconductor devices

2016 19th International Symposium on Electrical Apparatus and Technologies (SIELA), 2016
This paper concerns some issues related to failures that occurred in power semiconductor devices. A review of basic requirements aimed at normal and reliable operation of semiconductor components is done by using reliability prediction approaches and prognostic methods.
Anton Georgiev, Toncho Papanchev, Nikolay Nikolov   +2 more
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Semiconductor Device Reliability

1989
I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of ...
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Reliability physics study for semiconductor-polymer device development

Microelectronics Journal, 2003
Abstract We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications.
Dyanna G. D. Teixeira, Jane M. G. Laranjeira, Elder A. de Vasconcelos, Eronides Felisberto da Silva Júnior, Walter M. de Azevedo, Helen J. Khoury   +5 more
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An Efficient and Reliable Approach for Semiconductor Device Parameter Extraction

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
This paper presents an efficient and reliable method for general semiconductor device parameter extraction. The parameter extraction technique consists of minimizing a nonlinear objective function. A hybrid approach based on strategical combinations of the Gauss method and a novel minimum search scheme is employed. Various of strategies are proposed to
Shui-Jinn Wang, Jau-Yien Lee, Chun-Yen Chang   +2 more
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Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
A. Silzars, D.J. Bates, A. Ballonoff, G. Taylor   +3 more
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