Results 131 to 140 of about 367,607 (262)
A chiral photodetector capable of selectively distinguishing left‐ and right‐handed circularly polarized light is experimentally demonstrated. The device, which features a nanopatterned electrode inverse‐designed by a genetic algorithm within a metal–dielectric–metal nanocavity that incorporates a vacuum‐deposited small‐molecule multilayer, exhibits ...
Kyung Ryoul Park +3 more
wiley +1 more source
The emerged wurtzite (wz) Al1−x B x N alloy has drawn increasing attention due to its superior ferroelectricity and excellent compatibility with microelectronics.
Jie Su +7 more
doaj +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Metal halide perovskites (MHPs) have been proven to have excellent direct X‐ray detection properties due to their high carrier lifetime product, strong X‐ray absorption ability, a low electron‐hole pair creation energy, and excellent charge transport ...
Yanshuang Ba +11 more
doaj +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations. [PDF]
Linn T +3 more
europepmc +1 more source
Bonding large area silicon wafers [PDF]
Diffusion welding of large area silicon wafers without altering electrical properties of semiconductor devices in ...
core +1 more source
Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah +11 more
wiley +1 more source
Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Retraction]. [PDF]
europepmc +1 more source
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. [PDF]
Oh H, Dayeh SA.
europepmc +1 more source

