Results 61 to 70 of about 2,109,123 (294)
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Editorial for the Special Issue on State-of-the-Art CMOS and MEMS Devices
Complementary Metal Oxide Semiconductor (CMOS) and Micro-Electro-Mechanical System (MEMS) devices play significant roles in emerging research fields such as artificial intelligence (AI) [...
Zhiming Chen
core +1 more source
Semiclassical transport in semiconductor superlattices with boundaries [PDF]
, 2004 In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
core +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Nanoscale Research Letters, 2020 In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen +5 more
doaj +1 more source
Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core +1 more source
HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance
, 2022 A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared ...
Xiang Ding +4 more
core +1 more source
Dirac‐Source Linear X‐Ray Detection Diode
Advanced Functional Materials, EarlyView.Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir +8 more
wiley +1 more source
Generating structures in the form of GIS with micromechanics elements
Технологія та конструювання в електронній апаратурі, 2004 The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj
Advanced Functional Materials, EarlyView.A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source