Results 71 to 80 of about 2,109,123 (294)

Moisture-Resistant Scalable Ambient-Air Crystallization of Perovskite Films via Self-Buffered Molecular Migration Strategy

Nano-Micro Letters
Highlights A self-buffered molecular migration strategy is developed to suppress spontaneous intermolecular exchange between perovskite intermediate phase and ambient moisture.
Mei Yang, Weidong Zhu, Laijun Liang, Wenming Chai, Xiaomeng Wu, Zeyang Ren, Long Zhou, Dazheng Chen, He Xi, Chunfu Zhang, Jincheng Zhang, Yue Hao   +11 more
doaj   +1 more source

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Scientific Reports, 2017
In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang   +8 more
doaj   +1 more source

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Nanoscale Research Letters, 2017
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang, Hongxia Liu, Lu Zhao, Chenxi Fei, Xingyao Feng, Shupeng Chen, Yongte Wang   +6 more
doaj   +1 more source

Comments on “Negative capacitance effect in semiconductor devices”

, 1999
Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional equivalent circuit models of devices,
Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo   +2 more
core   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Rapid Microwave Plasma Engineering of HfO2/C@C Core‐Shell Fibrous Membrane Toward Flexible High‐Performance Electromagnetic Wave Absorption

Advanced Functional Materials, EarlyView.
Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding, Limeng Song, Wei Li, Jiangtao Hao, Xuewen Jiang, Mengru Li, Xinglai Yuan, Gang Wang, Yanqiu Zhu, Mi Tian, Hailong Wang, Hongxia Li, Biao Zhao, Rui Zhang, Bingbing Fan   +14 more
wiley   +1 more source

Electrical‐Programming‐Free Neural Crossbars Enabled by Photochemical Weight Patterning

Advanced Functional Materials, EarlyView.
A flexible neural‐crossbar hardware system enabled by electrical‐programming‐free, mask‐defined, array‐parallel photochemical weight patterning is demonstrated. Trained weights are physically implemented across the array, supporting multilevel programming, bending‐stable operation and reconfiguration, substrate reuse, and low‐energy readout while ...
Hyo‐Bin Jang, Ji‐Hoon Choi, Juhyung Seo, Seungwoo Baek, Hocheon Yoo, Hea‐Lim Park   +5 more
wiley   +1 more source

Fabrication and characterization of highly responsive hydrogen sensor based on Fe2O3:ZnO nanostructured thin film

Measurement: Sensors
This work aimed to manufacture a highly sensitive hydrogen gas sensor based on Fe2O3:ZnO thin film. The Fe2O3:ZnO based sputtering target was synthesized by a solid-state synthesis method.
Mikayel Aleksanyan, Artak Sayunts, Gevorg Shahkhatuni, Zarine Simonyan, Gohar Shahnazaryan, Vladimir Aroutiounian   +5 more
doaj   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Simulation Study on the Instability of Microscopic Columnar Structures in TiN Coatings Prepared by Magnetron Sputtering

Inorganics
To clarify the instability behavior of the columnar microstructure in RF magnetron sputtered TiN coatings under compressive loading, experimental characterization and finite element simulation were combined to investigate the microstructural features ...
Youqing Wang, Tiantian Yang, Minghui Liu, Xilin Xu, Furong Hou, Renqianzhuoma, Linjuan Yang, Xiangyi Guan, Huixia Liao, Ying Xiang   +9 more
doaj   +1 more source