Results 81 to 90 of about 2,109,123 (294)
Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen +5 more
doaj +1 more source
High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges
As silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical and scaling limits at sub-3-nanometer nodes, critical challenges including the short-channel effect (SCE), surging power consumption, and aggravated ...
Zirui Zhang, Zhiyong Zhang, Nie Zhang
core +1 more source
This research was conducted in the context of the semiconductor market, with a demand for high-performance and highly integrated semiconductor systems that simultaneously enhance performance and reduce chip size.
Sarah Eunkyung Kim +3 more
core +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu +12 more
doaj +1 more source
Chiral dopants induce supramolecular chirality in an achiral polymer (PFO), generating spin‐polarized carriers via the chiral‐induced spin selectivity (CISS) and suggesting a possible contribution of Spin‐polarized carrier transport to circularly polarized electroluminescence (CPEL).
Kazuyuki Asahi +4 more
wiley +1 more source
As the technology nodes of semiconductor devices have become finer and more complex, progressive scaling down has been implemented to achieve higher densities for electronic devices.
Ilgu Yun, Chuntaek Park
core +1 more source
Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography
In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep +4 more
wiley +1 more source
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post ...
Xing-Yao Feng +5 more
doaj +1 more source
An organic neuromorphic architecture for the classification of human motor behavior is presented and validated. It performs somatic integration by linearly combining the activity from three muscles. An investigation of synaptic weights is presented and discussed in relationship with the classification performance.
Ilenia Sergi +7 more
wiley +1 more source

