Results 31 to 40 of about 367,607 (262)

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

open access: yesAdvanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente   +3 more
wiley   +1 more source

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

open access: yesIEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang   +8 more
doaj   +1 more source

3 W Continuous-Wave Room Temperature Quantum Cascade Laser Grown by Metal-Organic Chemical Vapor Deposition

open access: yesPhotonics, 2023
In this article, we report a high-performance λ ~ 4.6 μm quantum cascade laser grown by metal-organic chemical vapor deposition. Continuous wave power of 3 W was obtained from an 8 mm-long and 7.5 μm wide coated laser at 285 K.
Teng Fei   +12 more
doaj   +1 more source

3D‐Printed Giant Magnetoresistive (GMR) Sensors Based on Self Compliant Springs

open access: yesAdvanced Engineering Materials, EarlyView.
This work explores 3D‐printed GMR sensors utilizing self‐compliant spring structures and conductive PLA composites. By optimizing arm width, we achieved high piezoresistive (0.34%/mm) and magnetoresistive (0.77%/mT) sensitivities. Demonstrated through Bluetooth‐integrated pressure and magnetic position sensing, these full printed low‐cost, customizable
Josu Fernández Maestu   +4 more
wiley   +1 more source

Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition

open access: yesScientific Reports
(Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated.
Yifan Jia   +10 more
doaj   +1 more source

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron [PDF]

open access: yes, 1974
Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials.
Danchenko, V.
core   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

open access: yesFunctional Diamond
The control of diamond film growth is crucial for the application of diamond films. In this article, different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process.
Li Junpeng   +10 more
doaj   +1 more source

Bias‐Free Highly Efficient and Stable Dye‐Sensitized Photoelectrochemical Cells via Cascade Charge Transfer

open access: yesAdvanced Functional Materials, EarlyView.
A buried‐junction DSPEC design is introduced that leverages cascade charge transfer to enhance efficiency, stability, and versatility. This approach facilitates effective charge transfer and minimizes recombination losses, leading to significant improvements.
Jun‐Hyeok Park   +8 more
wiley   +1 more source

Methods for removing defects arising during wet etching of polycrystalline silicon surface

open access: yesТехнологія та конструювання в електронній апаратурі, 2008
A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions ...
A. E. Ivanchykou   +3 more
doaj  

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