Results 1 to 10 of about 144 (133)

Progress of optically pumped GaSb based semiconductor disk laser

open access: yesOpto-Electronic Advances, 2018
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently,
Shu Shili   +6 more
doaj   +3 more sources

Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser

open access: yesApplied Sciences, 2023
We present a mode−locked GaSb−based optically pumped semiconductor disk laser operating at 2 µm based on the self−mode−locked mechanism. Using the delay differential equation model, we discuss the influence of cavity length on the stability of self−mode ...
Jian Feng   +7 more
doaj   +3 more sources

Frequency stabilization of an ultraviolet semiconductor disk laser [PDF]

open access: yesOptics Letters, 2013
We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency to a reference Fabry-Pérot cavity, the linewidth of the UV beam has been reduced to 16 kHz on short
David Pabœuf, Jennifer E Hastie
exaly   +5 more sources

Beam Control in an Intracavity Frequency-Doubling Semiconductor Disk Laser

open access: yesApplied Sciences, 2019
In this paper, we have demonstrated a 1.3 W green laser using a V-shaped intracavity frequency doubling 1036 nm semiconductor disk laser. The beam quality of the fundamental and second harmonic generation (SHG) laser is investigated.
Guanyu Hou   +9 more
doaj   +3 more sources

Ceramic Tm:Lu2O3 Disk Laser Pumped with a Semiconductor Disk Laser

open access: yesAdvanced Solid-State Lasers Congress, 2013
We demonstrate the first Tm-doped Lu2O3 ceramic laser utilizing disk geometry in the design of the active element. The ceramic 2-µm disk laser is pumped within the high-Q cavity of a 1.2-µm semiconductor disk laser.
Oleg Antipov   +2 more
exaly   +3 more sources

290-fs pulses from a semiconductor disk laser

open access: yesOptics Express, 2008
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.
Markus Weyers, Martin Zorn
exaly   +3 more sources

Dynamics Simulation and Experimental Investigation of Q-Switching in a Self-Mode-Locked Semiconductor Disk Laser

open access: yesIEEE Photonics Journal, 2022
Q-switching in a mode-locked laser not only makes the amplitude of every single output pulse unequal, but also limits the time width and peak power of output pulses.
Peng Zhang   +6 more
doaj   +1 more source

In-Well and Barrier Coupling Pump of Semiconductor Disk Laser

open access: yesIEEE Photonics Journal, 2022
We report an in-well and barrier coupling pump scheme of semiconductor disk laser (SDL). An in-well-absorbed (940 nm) and a barrier-absorbed (808 nm) pump source were used to measure laser output characteristics. The output power of the coupling pump can
Jian Feng   +9 more
doaj   +1 more source

Intracavity optical parametric oscillator: Model of dynamic system with different values of time delay for pump and signal radiation [PDF]

open access: yesИзвестия высших учебных заведений: Прикладная нелинейная динамика, 2021
 Most of intracavity pumped optical parametric oscillators (OPO) are made nowaday according to a scheme with a single-resonance OPO located in the cavity of a pump laser.
Morozov, Y. A.
doaj   +1 more source

Dynamics Simulation of Self-Mode-Locking in a Semiconductor Disk Laser Using Delay Differential Equations

open access: yesPhotonics, 2022
Self-mode-locked semiconductor disk lasers possess compact resonant cavity and stable construction. These devices have a wide application prospect because of their picosecond to sub-picosecond pulse width, excellent beam quality and tailorable emission ...
Tao Wang   +4 more
doaj   +1 more source

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