Results 11 to 20 of about 144 (133)

Generation of 1.8-W Average Power From a Diode-Pumped Femtosecond Rotary Nd:Glass Disk Laser

open access: yesIEEE Photonics Journal, 2020
We demonstrate 1.8 W of average output power with 350 fs of pulse duration from a diode-pumped mode-locked rotary Nd:glass disk laser. In this laser with rotating Nd:glass disk structure, we use a Nd:glass disk with a diameter of 50 mm, which ...
Lei Gong   +6 more
doaj   +1 more source

Ultrashort cavity length effects on the performance of GaInP multiple-quantum-well laser diode

open access: yesResults in Optics, 2023
The cavity length of a semiconductor laser plays a key role in its operation and dynamic behaviour. Moreover, downsizing the quantum well (QW) laser chip is required for specific applications, such as hard disk drives (HDDs).
Rehab Joko Hussin, Ivan B. Karomi
doaj   +1 more source

Design of a Scanning Module in a Confocal Microscopic Imaging System for Live-Cell Imaging

open access: yesPhotonics, 2023
This study proposes a Nipkow-based pinhole disk laser scanning confocal microscopic imaging system for ordinary optical microscopy, fluorescence microscopy, and confocal microscopy imaging of biological samples in order to realize the dynamic ...
Ran Tao, Tao Zhang
doaj   +1 more source

Demonstration of a 20‐W membrane‐external‐cavity surface‐emitting laser for sodium guide star applications

open access: yesElectronics Letters, 2021
We present a record 20‐W continuous‐wave output power membrane‐external‐cavity surface‐emitting laser (MECSEL) double‐bonded to silicon carbide (SiC) heat spreaders emitting around 1178 nm.
D. Priante   +8 more
doaj   +1 more source

A Numerical Simulation of Nanodisk Semiconductor-Plasmonic Laser Using BOR-FDTD With a Multilevel Gain Medium Model

open access: yesIEEE Photonics Journal, 2012
A temporal and spatial simulation and design of nanoplasmonic laser based on a semiconductor nanodisk is presented in this paper. A body-of-revolution finite-difference-time-domain (BOR-FDTD) simulation incorporated with a semiclassical multilevel model ...
Qian Wang, Seng Tiong Ho
doaj   +1 more source

Pulsed pumping of semiconductor disk lasers

open access: yesOptics Express, 2007
Efficient operation of semiconductor disk lasers is demonstrated using uncooled and inexpensive 905nm high-power pulsed semiconductor pump lasers. Laser emission, with a peak power of 1.7W, is obtained from a 2.3mum semiconductor disk laser. This is seven times the power achieved under continuous pumping.
Hempler, N.   +7 more
openaire   +4 more sources

Effect of Vacuum Heat Treatment on the Microstructure of a Laser Powder-Bed Fusion-Fabricated NiTa Alloy

open access: yesMetals, 2022
The semiconductor industry uses a physical vapor-deposition process, with a nickel-tantalum (NiTa) alloy-sputtering target, to apply an amorphous NiTa thin film layer between the magnetic soft underlayer and substrate of a heat-assisted magnetic ...
Cheng-Tse Wu   +2 more
doaj   +1 more source

Semiconductor disk laser pumped Cr^2+:Znse 
lasers

open access: yesOptics Express, 2009
A new flexible pump source, the optically-pumped semiconductor disk laser (SDL), for the Cr(2+):ZnSe laser is reported. The SDL provides up to 6W output power at a free running central wavelength of 1.98 microm. The Cr(2+):ZnSe laser operated at an output power of 1.8W and a slope efficiency of approximately 50% with respect to absorbed pump power ...
Hempler, N.   +8 more
openaire   +4 more sources

Amplitude Noise and Timing Jitter Characterization of a High-Power Mode-Locked Integrated External-Cavity Surface Emitting Laser

open access: yesIEEE Photonics Journal, 2014
We present a timing jitter and amplitude noise characterization of a high-power mode-locked integrated external-cavity surface emitting laser (MIXSEL). In the MIXSEL, the semiconductor saturable absorber of a SESAM is integrated into the structure of a ...
M. Mangold   +6 more
doaj   +1 more source

GeSnOI mid-infrared laser technology

open access: yesLight: Science & Applications, 2021
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors.
Binbin Wang   +16 more
doaj   +1 more source

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