Results 21 to 30 of about 2,970 (179)
NbN Broadband Plasmonic Absorbers for Efficient Hot-Carrier Injection Toward Improved Solar-to-Hydrogen Conversion. [PDF]
Niobium nitride (NbN) broadband plasmonic metasurface absorbers provide an efficient platform for solar‐energy conversion through hot‐carrier injection. Quasi‐epitaxial NbN features a low work function of 4.0 eV, reducing the interfacial injection barrier and facilitating charge transfer into adjacent photocatalysts.
Peng TY +11 more
europepmc +2 more sources
Ceramic Tm:Lu2O3 Disk Laser Pumped with a Semiconductor Disk Laser
We demonstrate the first Tm-doped Lu2O3 ceramic laser utilizing disk geometry in the design of the active element. The ceramic 2-µm disk laser is pumped within the high-Q cavity of a 1.2-µm semiconductor disk laser.
Esa J. Saarinen +6 more
openaire +2 more sources
Ultrafast dynamics of semiconductor disk lasers [PDF]
ISBN:978-1-5090-6736 ...
Alfieri, Cesare G.E. +4 more
openaire +2 more sources
High Power (>27 W) Semiconductor Disk Laser Based on Pre-Metalized Diamond Heat-Spreader
High power semiconductor disk lasers (SDLs) were demonstrated based on the thermal management using pre-metalized diamond heat-spreader. The processing of pre-metallization using Cu-Sn alloy was developed. The resultant and influence of pre-metallization
Guan-Yu Hou +9 more
doaj +1 more source
Cutting-Edge High-Power Ultrafast Thin Disk Oscillators
A growing number of applications in science and industry are currently pushing the development of ultrafast laser technologies that enable high average powers.
Thomas Südmeyer +10 more
doaj +1 more source
We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered ...
C. Borgentun +4 more
doaj +1 more source
Self-Sustained Laser Pulsation in Active Optomechanical Devices
We developed a model for an active optomechanical cavity embedding a semiconductor optical gain medium in the presence of dispersive and dissipative optomechanical couplings. Radiation pressure drives the mechanical oscillation and the back-action occurs
Debora Princepe +3 more
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Phase Engineering of Atomically Precise Nanoclusters (APNCs) of Gold and Beyond
Engineering the structural phase of materials is of paramount importance for both fundamental research and practical applications. In this Review, we summarize the recent progress in controlling the phases of atomically precise nanoclusters (APNCs) of gold, silver and copper, as well as bimetallic systems. The phase‐enabled material properties of APNCs
Yitong Wang +4 more
wiley +1 more source
High-power 970 nm semiconductor disk laser
Semiconductor disk lasers (SDLs) have emerged at the frontier of laser technologies. Here, the chip design, packaging process, resonator, pumping strategy, etc. are optimized for the performance improvement of a 970 nm SDL. After optimization, a power of 70.3 W is attained under continuous wave (CW) operation, and the corresponding
Zhicheng Zhang +9 more
openaire +2 more sources

