Results 181 to 190 of about 171,689 (340)

Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

Advanced Materials, EarlyView.
A three‐step sacrificial atomic layer deposition (s‐ALD) process enables wafer‐scale growth of ultrathin and uniform antimony (Sb) thin films. An ultrathin (≈4 nm) Sb film is uniformly deposited with its characteristic bilayer structure (Sb‐Sb) aligned along the substrate.
Gwangsik Jeon, Sangmin Jeon, Seunghwan Lee, Jeong Woo Jeon, Wonho Choi, Byongwoo Park, Sungjin Kim, Chanyoung Yoo, Hyejin Jang, Cheol Seong Hwang   +9 more
wiley   +1 more source

Low resistance p-type contacts to monolayer WSe₂ through chlorinated solvent doping. [PDF]

Nat Commun
Hoang L, Bennett RKA, Hoang AT, Peña T, Zhang Z, Hocking M, Saunders AP, Jaikissoon M, Liu F, Pop E, Mannix AJ.   +10 more
europepmc   +1 more source

Theory of effect of near-infrared laser polarization direction on high-order terahertz sideband generation in semiconductors

, 2015
Houquan Liu, Weilong She
openalex   +1 more source

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

Near-Field Imaging of Hybrid Surface Plasmon-Phonon Polaritons on n-GaN Semiconductor. [PDF]

Materials (Basel)
Janonis V, Cernescu A, Prystawko P, Januškevičius R, Indrišiūnas S, Kašalynas I.   +5 more
europepmc   +1 more source

CdTe Quantum Dots Encapsulated on Perovskite Grains Enable Highly Efficient and Stable Perovskite Solar Cells

Advanced Materials, EarlyView.
Present work demonstrates an efficient laser‐assisted localized interfacial engineering strategy that achieves epitaxial‐grade atomic coherence in spatially defined p‐n microscopic heterointerfaces, via precisely embedding p‐type CdTe QDs into an n‐type perovskite matrix, which concurrently establishes dual optimization of microscale carrier management
Wenhao Zhao, Deyou Lin, Riming Sun, Zhiyu Fang, Pengfei Guo, Yadong Xu, Hongqiang Wang, Feng Yan   +7 more
wiley   +1 more source

Direct Formation of Stable 1T' Molybdenum Telluride (MoTe₂) by Laser Annealing Processes as Robust Contacts for High-Performance Molybdenum Disulfide (MoS₂) Field Effect Transistors. [PDF]

ACS Appl Mater Interfaces
Kuo YZ, Liu MJ, Sino PA, Lai PC, Chung CC, Hsu YC, Yang TY, Cyu RH, Chuang FC, Kuo HC, Jeon S, Chueh YL.   +11 more
europepmc   +1 more source

Theorical analysis of a monolithic all-active three-section semiconductor laser

, 2017
Mohammed Mehdi Bouchene, Rachid Hamdi, Qin Zou   +2 more
openalex   +2 more sources

Materials and System Design for Self‐Decision Bioelectronic Systems

Advanced Materials, EarlyView.
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng, Hong Liu, Yongheng Zhang, Youbin Zheng, Xuyin Ding, Mengni Zhu, Guoyue Shi, Yan Wang, Hossam Haick, Min Zhang   +9 more
wiley   +1 more source

Electromagnetic and heated pulse laser on wave propagation during electrons and holes excitation processes in a rotator semiconductor medium. [PDF]

Sci Rep
Abo-Dahab SM, Salah DM, Gafel HS, Abd-Alla AM, Abdelhafez MA.   +4 more
europepmc   +1 more source