Results 151 to 160 of about 14,706 (300)

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Product Introductions and Price Measures for Microprocessor Chips in the 1990s [PDF]

The semiconductor industry is credited with one of the fastest rates of product innovation and technical change within manufacturing, as chipmakers generate wave after wave of ever more powerful chips at prices not much higher than those of existing ...
Ana Aizcorbe
core  

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo, Seongmin Ko, Sunggyu Ryoo, Jaehyoung Park, Jaeyoung Kim, Juntae Jang, Jinwoo Sim, Donguk Kim, SeungNam Cha, Chongwu Zhou, Kyungjune Cho, Takhee Lee   +11 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Extreme Ultraviolet Lithography

, 2001
It is generally recognized by economist and policy makers that new technology will be the driving force in our economy. With the greatest need for high-speed computing, better memory storage application and the development of micro-electrical-mechanical ...
Lubis, Ahmad, Mulia, Farolan, Patdu, Archie, Takeshita, Atsunobu   +3 more
core  

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Solution-Processed Submicron-Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V. [PDF]

Small Methods
Xu K, Sheng C, Xia D, Qiu ZJ, Cong C, Liu R, Hu L.   +6 more
europepmc   +1 more source

Open-Source Differentiable Lithography Imaging Framework

The rapid evolution of the electronics industry, driven by Moore\u27s law and the proliferation of integrated circuits, has led to significant advancements in modern society, including the Internet, wireless communication, and artificial intelligence (AI)
Chen, Guojin, Pan, David Z., Geng, Hao, Yu, Bei   +3 more
core  

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source