Flexible low-voltage organic transistors with a transit frequency of 40 MHz and an on/off current ratio of 10 orders of magnitude. [PDF]
Sci AdvZschieschang U, Klauk H.
europepmc +1 more source
Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Advanced Electronic Materials, EarlyView.Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Patterning Fidelity Enhancement and Aberration Mitigation in EUV Lithography Through Source-Mask Optimization. [PDF]
Micromachines (Basel)Wang Q, Wu Q, Li Y, Liu X, Li Y.
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Advanced Electronic Materials, EarlyView.Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source
Self-aligned imprint lithography process for fabricating indium-gallium- zinc-oxide thin film transistor arrays. [PDF]
Sci RepNa CY, No C, Cho SM.
europepmc +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications. [PDF]
Chem MaterChowdhury MI +10 more
europepmc +1 more source
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors
Advanced Electronic Materials, EarlyView.MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun +15 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Perpendicular electric and magnetic fields are used to control charge‐density‐wave (CDW) domain dynamics in quasi‐two‐dimensional h‐BN/1T‐TaS2 field‐effect devices. Electrical gating produces a non‐monotonic modulation of the CDW depinning threshold — behavior distinct from quasi‐one‐dimensional CDW systems.
Jonas O. Brown +4 more
wiley +1 more source
High-Resolution Photolithographic Patterning of Conjugated Polymers via Reversible Molecular Doping. [PDF]
Polymers (Basel)Kim Y +6 more
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