Results 141 to 150 of about 11,779 (261)

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source

Highly Selective Wet Etching of Ge Over Ge_1- <i>_x</i> Sn _<i>x</i> Enabling Fully Released Group IV Microstructures. [PDF]

ACS Omega
Ayinde S, Myronov M.
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source

Prospects of semiconductor technology and lithography

Oyo Buturi, 1999
openaire   +1 more source

Laser Lithography for Semiconductor Roadmap

The Review of Laser Engineering, 2000
openaire   +2 more sources

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source

The Evolution of Lithography: From Resolution Scaling to Manufacturing Constraints. [PDF]

Micromachines (Basel)
Chae H, Park H, Kang DJ.
europepmc   +1 more source

Colossal Modulation of Mechanical Resonance with temperature in single‐Crystalline SrTiO3 Microbridges Integrated on Silicon

Advanced Electronic Materials, EarlyView.
The structural characteristics and resonant mechanical behavior of suspended microbridges comprised of single‐crystalline SrTiO3 that has been grown on silicon are presented. Due to differences in thermal expansion between the SrTiO3 and silicon, we find that the resonant frequencies of the microbridges are not only enhanced, but also hyper‐sensitive ...
Deepa Guragain, Laveeza Ahmad, Alexander A. Puretzky, Carson Hester, Zheng Hui Lim, Richard Le, Sundeep Mukherjee, Ye Cao, Joseph H. Ngai   +8 more
wiley   +1 more source