Results 141 to 150 of about 770,517 (280)

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies. [PDF]

Adv Sci (Weinh)
Erbas B, Bala A, Furci H, Dutta A, Kumar N, Zenobi R, Boero G, Kis A, Brugger J.   +8 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Semiconductor manufacturing wastewater challenges and the potential solutions via printed electronics. [PDF]

iScience
Sandhu S, Zumeit A, Tian Z, Vinciguerra V, Dahiya R.   +4 more
europepmc   +1 more source

Capacitive Pixelated CMOS Electronic Nose

Advanced Electronic Materials, EarlyView.
A 1024‐pixel CMOS capacitive E‐nose with inkjet‐printed MOFs and polymer layers yields gas‐specific capacitance fingerprints under humid conditions, discriminating toluene from 2‐butanone at low power. ABSTRACT Although some of the human senses can nowadays be replaced by low‐cost electronic sensors such as microphones and image sensors, a compact low ...
M. A. Basyooni‐M. Kabatas, Tao Shen, Kaï Betlem, Chunyu Huang, Monique A. van der Veen, Frans Widdershoven, Murali K. Ghatkesar, Peter G. Steeneken   +7 more
wiley   +1 more source

A universal all-dry microfabrication method for sensitive electronic materials via an inorganic molecular lithographic mediator. [PDF]

Nat Commun
Zeng C, Xu Y, Wei X, Liang J, Sun Z, He X, Du G, Wang S, Liu Y, Zhou X, Li Y, Liu K, Ma Y, Zhai T, Li H.   +14 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Wafer-Scale All-Dielectric Quasi-BIC Metasurfaces: Bridging High-Throughput Deep-UV Lithography with Nanophotonic Applications. [PDF]

Nano Lett
Beisenova A, Adi W, Wu W, Biswas SK, Rosas S, Stamenic B, John DD, Yesilkoy F.   +7 more
europepmc   +1 more source

EUV lithography: technology for the semiconductor industry in 2010 [PDF]

Europhysics News, 2004
H. Enkisch, J. Trenkler
openaire   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

Advanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang, Jianbi Le, Rong Chen, Zhixian Lin, Xiongtu Zhou, Yongai Zhang, Chaoxing Wu   +6 more
wiley   +1 more source