Results 121 to 130 of about 770,517 (280)

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

open access: yesAdvanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton   +4 more
wiley   +1 more source

Tunable Dynamics via Dual‐Ion Modulation for Event‐based Data Processing Using a Highly Uniform and Self‐Rectifying Memristor Array

open access: yesAdvanced Science, EarlyView.
Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho   +7 more
wiley   +1 more source

Superlattice Architectures for Advancing Photothermal Catalysis: Mechanisms and Applications

open access: yesAdvanced Science, EarlyView.
This paper provides a timely overview of superlattice architectures in photothermal catalysis, with a systematic review on mechanisms at both atomic and macroscopic scales in different processes, challenges, and future opportunities. ABSTRACT Photothermal catalysis has emerged as a powerful strategy to complement photocatalysis by harnessing full ...
Yuzhao Wu   +5 more
wiley   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols. [PDF]

open access: yesAdv Mater
Tsarev S   +14 more
europepmc   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo   +11 more
wiley   +1 more source

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors. [PDF]

open access: yesACS Nano
Tseng R   +19 more
europepmc   +1 more source

Home - About - Disclaimer - Privacy