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Lithography simulation in semiconductor manufacturing

SPIE Proceedings, 2005
In the 30 years since lithography modeling was first introduced, optical lithography simulation has progressed from a curiosity, to a research and development tool, and finally to a manufacturing tool. While much has been published on new developments in lithography simulators and their use in advanced lithography development, less is published on how ...
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Laser ablation lithography on thermoelectric semiconductor

Applied Surface Science, 2006
In this paper, experimental results of the investigation of the periodic structure on thermoelectric semiconductor Cu2Se are presented. Periodic structures were formed on surfaces of semiconductors due to multi-beam interaction of Q-switched Nd:YAG laser, which was operated in the lowest order of Gaussian mode and pulse duration 7 ns.
O.Yu. Semchuk   +4 more
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Semiconductor foundry, lithography, and partners

SPIE Proceedings, 2002
The semiconductor foundry took off in 1990 with an annual capacity of less than 0.1M 8-inch-equivalent wafers at the 2-mm node. In 2000, the annual capacity rose to more than 10M. Initially, the technology practiced at foundries was 1 to 2 generations behind that at integrated device manufacturers (IDMs).
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The future costs of semiconductor lithography

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
A method for comparing the costs for photoprocessing high volume semiconductor logic and memory wafers is presented. Industry lithographic trends and process structures are discussed and a cost model is applied. Some typical results obtained with optical tooling and x-ray synchrotron based lithography are discussed for 1/2 μ ground rules.
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Optimization of alignment in semiconductor lithography equipment

Precision Engineering, 2009
Recent enhanced integration of semiconductors permits less and less overlay error at exposure. Accordingly, higher-order alignment adjustment, which considers not only linear but also nonlinear error components, has been recently carried out. However, conventional higher-order alignment adjustment methods are based on least squares, and thus are only ...
Ryuhei Miyashiro, Youzou Fukagawa
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Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography

Advanced Functional Materials, 2015
As fabrication and positioning of micro‐ and nanocrystals grow in importance in a wide range technological applications, there is an increasing requirement for the development of a shared technological platform that is able to process materials from solutions on large areas.
Gentili Denis   +7 more
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Diagnostics and lithography of semiconductor structures for nanoelectronics

Nanotechnologies in Russia, 2008
A complex of metrological, diagnostic, and technological support of investigations and innovations in the field of nanotechnologies based on the Nanostructures joint service center is presented. Results of the study of the atomic structure of the surface, interfaces, and structural defects in semiconductor materials; the development of modern electron ...
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Optical metrology of semiconductor wafers in lithography

SPIE Proceedings, 2013
This paper presents a concise description of 3 optical measurement systems that play a critical role in optical lithography of semiconductor devices. A level sensor and alignment sensor are described that are used to measure, respectively, wafer height variations and the wafer location prior to resist exposure.
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EUV LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING AND NANOFABRICATION

COSMOS, 2007
EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used.
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Semiconductor-, Lithography-, and Electrically-Related Applications

1999
Electron-beam (e-beam) lithography has over the past 15 years or so taken a predominant role in Si wafer patterning in the semiconductor industry due to its sub-micron (and potential nano-scale) resolution. This high resolution and the accurate focussing of e-beams is however limited by charging which occurs in the photo-resist: a trapping of charge ...
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