Results 131 to 140 of about 11,779 (261)

Electrical Characterization of Mesh-Structured Floating-Gate Neuromorphic Transistors with Varying Mesh Sizes. [PDF]

Micromachines (Basel)
Koo T, Chae H, Yoo K, Jeong H, Chae J, Kim D, Park J, Jang M.   +7 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. [PDF]

Nat Commun
Zhang Y, Jia X, Chen J, Li M, Li Y, Dai L.   +5 more
europepmc   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO. [PDF]

ACS Nano
Huang CC, Chen BC, Lee HT, Rahul, Su YC, Wu CT, Hsu CC, Huang YL, Yang JC, Lien DH.   +9 more
europepmc   +1 more source

Robust NbN‐on‐Si/SiGe Hybrid Microwave Quantum Circuits With Long‐Term Stability

Advanced Electronic Materials, EarlyView.
Superconducting NbN resonators integrated with Si/SiGe quantum wells based semiconducting chip are investigated as a CMOS–compatible platform for scalable quantum hardware. Temperature–dependent microwave spectroscopy reveals loss mechanisms from TLS, quasiparticles, and scattering.
Paniz Foshat, Samane Kalhor, Shima Poorgholam‐khanjari, Douglas Paul, Martin Weides, Kaveh Delfanazari   +5 more
wiley   +1 more source

Deployable 3D architectures from wafer-fabricated precursors. [PDF]

Nat Commun
Wang Y, Shum K, Song Y, Chen T.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Solution-Processed Submicron-Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V. [PDF]

Small Methods
Xu K, Sheng C, Xia D, Qiu ZJ, Cong C, Liu R, Hu L.   +6 more
europepmc   +1 more source

Progress in Semiconductor Devices and Lithography.

The Journal of The Institute of Electrical Engineers of Japan, 2000
openaire   +2 more sources