Results 131 to 140 of about 770,517 (280)

Bubble Defect Mitigation in Semiconductor Lithography Process

Asia-pacific Journal of Convergent Research Interchange, 2023
Kyoung-Whan Oh, Takashi Sasa, Seok Heo, Daejung Kim, Jung-Hyeon Kim   +4 more
openaire   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Photopatterning of organic mixed ionic electronic conductors for monolithic complementary inverter. [PDF]

iScience
Xie X, Zhang L, Ma M, Ye G, Zhang J, Chen X, You M, Liu J.   +7 more
europepmc   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

A review of commercial and laboratory-based microfluidic devices based on glass and/or silicon substrates. [PDF]

RSC Adv
Deb A, Nagesh G, Harrison T, Spicer D, Ting DS, Ahamed MJ.   +5 more
europepmc   +1 more source

Ferromagnetic Resonance Response of bcc Fe60V40 Layers Generated from Short‐Range Ordered Precursors

Advanced Electronic Materials, EarlyView.
ABSTRACT Layers of body‐centered cubic (bcc) Fe60V40 are generated in short‐range ordered (SRO) Fe60V40 precursors through atomic displacements caused by the irradiation of light noble gas ions. The structural change leads to the onset of ferromagnetism confined to the bcc layers. Here, the variation of ferromagnetic resonance response as a function of
Md. Shadab Anwar, Hamza Cansever, Kilian Lenz, Ulrich Kentsch, Shengqiang Zhou, Jürgen Fassbender, Kay Potzger, Olav Hellwig, Jürgen Lindner, Rantej Bali   +9 more
wiley   +1 more source

Progress in Semiconductor Devices and Lithography.

The Journal of The Institute of Electrical Engineers of Japan, 2000
openaire   +2 more sources

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Nanoimprint Lithography Enabling High-Performance Organic Optoelectronics: Advances and Perspectives. [PDF]

Nanomicro Lett
Song N, Guo X, Zhao H, Li B, Liang N, Zhai T.   +5 more
europepmc   +1 more source

Laser Lithography for Semiconductor Roadmap

The Review of Laser Engineering, 2000
openaire   +2 more sources