Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography. [PDF]
Chu TTH +13 more
europepmc +1 more source
This study integrates a wrist‐worn sensing platform based on a low‐noise planar Hall magnetoresistive sensor with time‐series deep learning to enable long‐range, single‐sensor, multi‐command gesture recognition with high accuracy. Further evaluations show reliable generalization across different days, previously unseen users, wearing‐position ...
Guannan Mu +5 more
wiley +1 more source
Electroluminescent photoresists extending lithographic scaling to OLEDs. [PDF]
Lo SW +16 more
europepmc +1 more source
Wearable photovoltaic textiles: From device technologies to long‐term reliability
Wearable photovoltaic textiles are highlighted as reliable energy sources that combine solar cell efficiency with hierarchical textile‐specific mechanical and environmental durability. Structural and encapsulation strategies, including planarization, neutral‐axis engineering, and advanced barrier designs, enable waterproofing, washability, UV shielding,
Eun Gyo Jeong +5 more
wiley +1 more source
Viscoelasticity-guided covalent assembly of atomically precise nanoclusters via nitrene-mediated two-photon lithography. [PDF]
Ji S +18 more
europepmc +1 more source
Quasi‐2D perovskite memristors: From layered structures to advanced computing applications
Quasi‐2D perovskites enable stable memristive switching through dimensional engineering that controls ion migration pathways. The layered structure suppresses leakage, improves environmental stability, and enables analog conductance modulation for neuromorphic computing, artificial vision, and in‐memory architectures, transforming ion migration from a ...
Jie Ma, Yujian Du, Yuljae Cho
wiley +1 more source
A Study on Condition-Based Maintenance for Wafer Table Edge Degradation in Photolithography Equipment. [PDF]
Joo K, Lee KH, Jeon JW.
europepmc +1 more source
ASAI, Satoru, HANYU, Isamu
openaire +1 more source
Van der Waals ferroelectric semiconductor tunnel junction with ultra‐low switching voltage
Ferroelectric tunnel junctions are promising building blocks for energy‐efficient memory and brain‐inspired computing, but their practical use is limited by the relatively high voltages required for operation. Here, we develop an all‐two‐dimensional ferroelectric tunnel junction based on AgBiP2Se6 that enables reliable memory operation below 0.2 V and ...
Fuqin Sun +17 more
wiley +1 more source
Polarity-engineered Sn-Ti cluster photoresists for sub-10-nm high-resolution lithography. [PDF]
Wang D +10 more
europepmc +1 more source

