Results 41 to 50 of about 22,919 (266)
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Semiconductor Manufacturing in Europe
This document seeks to provide a comprehensive overview of semiconductor manufacturing in Europe. Semiconductor manufacturing is a critical industry that plays a key role in powering various technological advancements in our world today. Many industries are becoming increasingly reliant on semiconductor technology such as automotive, artificial ...
Aidan Marca, Fabio Ugolini
openaire +2 more sources
A gradient M/MOx (M = Sn, Cu, Cd) synergistic interphase was constructed on Al via a one‐step displacement reaction. This interphase leverages high aluminophilicity and ion‐buffering capability to accelerate desolvation, enhance Al3+ transport, and suppress side reactions, enabling ultrastable symmetric cell operation at 0.05 mA cm−2 for 1800 h with an
Shuang Cheng +7 more
wiley +1 more source
A Reliable Framework for Batch Reactor State Response Forecasting
Reliable automation of industrial nitrile butadiene rubber (NBR) batch reactors remains challenging because operator interventions can abruptly change future temperature trajectories and conventional surrogate models rarely indicate when forecasts are ...
Chi Li, Yu-Ming Hsieh
doaj +1 more source
Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi +9 more
wiley +1 more source
Semiconductor manufacturing [PDF]
F. Frank Chen +2 more
openaire +2 more sources
Sudden Concept Drift Detection and Adaptation in Virtual Metrology for Semiconductor Manufacturing
Virtual metrology (VM) has emerged as a promising technology for semiconductor manufacturing; however, abrupt changes in production conditions can significantly degrade prediction accuracy. Therefore, detecting sudden concept drift becomes crucial. Micro
Chi Li, Yu-Ming Hsieh
doaj +1 more source
Semiconductor processing and manufacturing [PDF]
The viability of semiconductor deposition and treatment processes for manufacturing are assessed and critical issues identified for CdTe, Cu(InGa)Se2, thin film silicon and amorphous silicon technologies. The focus is on increasing throughput and decreasing costs.
William N. Shafarman +4 more
openaire +1 more source
Single‐crystal gold microplates are high‐performance nanomaterials with an impressive wafer‐based application space. Progress has, however, been tempered by an inability to exert synthetic control over microplate size, shape, and positioning. In this work, control over these parameters is demonstrated using a seed‐mediated synthesis that both confines ...
Debasish Panda +9 more
wiley +1 more source
Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers.
Chun-Wei Chang +13 more
doaj +1 more source

