Results 31 to 40 of about 22,919 (266)
Design of a Novel W-Sinker RF LDMOS
A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip ...
Xiangming Xu +10 more
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT)
Hsin‐Yuan Chiu +16 more
doaj +1 more source
The Investigation of Field Plate Design in 500 V High Voltage NLDMOS
This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied.
Donghua Liu +10 more
doaj +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
The demand for chiplet integration using 2.5D and 3D advanced packaging technologies has surged, driven by the exponential growth in computing performance required by artificial intelligence and machine learning (AI/ML).
Shenggao Li +3 more
doaj +1 more source
Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing
An optimal design of semiconductor device and its process uniformity are critical factors affecting desired figure-of-merits as well as reducing fabrication cost of fixing possible malfunctioning in semiconductor manufacturing.
Hyun-Chul Choi +3 more
doaj +1 more source
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
Numerous performance indicators exist for semiconductor manufacturing systems. Several studies have been conducted regarding the performance optimization of semiconductor manufacturing systems.
Qingyun Yu +4 more
doaj +1 more source

