Results 11 to 20 of about 22,919 (266)

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

open access: yesIEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao   +8 more
doaj   +1 more source

Controlled Cavity Length and Wide-Spectrum Lasing in FAMACsPb(BrI)3 Ternary Perovskite Vertical-Cavity Surface-Emitting Lasers with an All-Dielectric Dielectric Bragg Reflector

open access: yesCrystals, 2023
In this study, we utilized a dielectric Bragg reflector (DBR) as a mirror and positioned a wide-spectrum FAMACsPb(BrI)3 halide perovskite film between two DBRs to construct a vertical-cavity surface-emitting laser (VCSEL) structure.
Chiao-Chih Lin   +6 more
doaj   +1 more source

Machine learning for semiconductors

open access: yesChip, 2022
Thanks to the increasingly high standard of electronics, the semiconductor material science and semiconductor manufacturing have been booming in the last few decades, with massive data accumulated in both fields. If analyzed effectively, the data will be
Duan-Yang Liu   +6 more
doaj   +1 more source

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

open access: yesSensors, 2017
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao   +6 more
doaj   +1 more source

A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array [PDF]

open access: yesAPL Photonics
This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods.
Chi-En Chen   +9 more
doaj   +1 more source

Japanese Semiconductor Industry’s Collaboration with Taiwan Semiconductor Manufacturing Company

open access: yesEast Asian Policy, 2023
On 17 December 2021, Japan granted administrative approval to Taiwan Semiconductor Manufacturing Co Ltd (TSMC) to build a US$7 billion semiconductor chip-manufacturing foundry in Japan. The collaboration between the Sony Group and the world’s No.
Tai Wei LIM
doaj   +1 more source

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel

open access: yesSensors, 2017
A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low
Seiji Takahashi   +17 more
doaj   +1 more source

Theoretical model and practical exploration of digital technology-empowered green management of water resource in semiconductor manufacturing industry [PDF]

open access: yesZiyuan Kexue, 2023
[Objective] This study focused on the green management of water resources in the semiconductor manufacturing industry based on digital technology. It analyzed the establishment of a comprehensive framework for green management of water resources from the
MA Beiling, AO Tong, ZHU Kangfu, LI Yonggang, HE Tianxiang
doaj   +1 more source

A Product Design Problem in Semiconductor Manufacturing [PDF]

open access: yesOperations Research, 1992
We consider the product design problem of allocating the chip sites on a semiconductor wafer to various types of chips. The manufacturing facility sells chips to its customers in sets (a specified number of several different types of chips), and the objective of the facility is to maximize the average production rate of sets.
Florin Avram, Lawrence M. Wein
openaire   +1 more source

Analysis the scatter parameter of SOI RF switch with different design structure

open access: yesDianzi Jishu Yingyong, 2019
Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt ...
Xin Haiwei, Liu Zhangli
doaj   +1 more source

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