Results 1 to 10 of about 351,357 (273)

Post-Quantum Authenticated Encryption against Chosen-Ciphertext Side-Channel Attacks

Transactions on Cryptographic Hardware and Embedded Systems, 2022
Over the last years, the side-channel analysis of Post-Quantum Cryptography (PQC) candidates in the NIST standardization initiative has received increased attention.
Melissa Azouaoui, Yulia Kuzovkova, Tobias Schneider, Christine van Vredendaal   +3 more
doaj   +3 more sources

From MLWE to RLWE: A Differential Fault Attack on Randomized & Deterministic Dilithium

Transactions on Cryptographic Hardware and Embedded Systems, 2023
The post-quantum digital signature scheme CRYSTALS-Dilithium has been recently selected by the NIST for standardization. Implementing CRYSTALSDilithium, and other post-quantum cryptography schemes, on embedded devices raises a new set of challenges ...
Mohamed ElGhamrawy, Melissa Azouaoui, Olivier Bronchain, Joost Renes, Tobias Schneider, Markus Schönauer, Okan Seker, Christine van Vredendaal   +7 more
doaj   +1 more source

Enabling FrodoKEM on Embedded Devices

Transactions on Cryptographic Hardware and Embedded Systems, 2023
FrodoKEM is a lattice-based Key Encapsulation Mechanism (KEM) based on unstructured lattices. From a security point of view this makes it a conservative option to achieve post-quantum security, hence why it is favored by several European authorities (e ...
Joppe W. Bos, Olivier Bronchain, Frank Custers, Joost Renes, Denise Verbakel, Christine van Vredendaal   +5 more
doaj   +1 more source

Masking Kyber: First- and Higher-Order Implementations

Transactions on Cryptographic Hardware and Embedded Systems, 2021
In the final phase of the post-quantum cryptography standardization effort, the focus has been extended to include the side-channel resistance of the candidates.
Joppe W. Bos, Marc Gourjon, Joost Renes, Tobias Schneider, Christine van Vredendaal   +4 more
doaj   +1 more source

Directional emission of white light via selective amplification of photon recycling and Bayesian optimization of multi-layer thin films

Scientific Reports, 2022
Over the last decades, light-emitting diodes (LED) have replaced common light bulbs in almost every application, from flashlights in smartphones to automotive headlights.
Heribert Wankerl, Christopher Wiesmann, Laura Kreiner, Rainer Butendeich, Alexander Luce, Sandra Sobczyk, Maike Lorena Stern, Elmar Wolfgang Lang   +7 more
doaj   +1 more source

High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors

Sensors, 2023
We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single ...
Michael Yampolsky, Evgeny Pikhay, Ruth Shima Edelstein, Yakov Roizin   +3 more
doaj   +1 more source

Protecting Dilithium against Leakage

Transactions on Cryptographic Hardware and Embedded Systems, 2023
CRYSTALS-Dilithium has been selected by the NIST as the new standard for post-quantum digital signatures. In this work, we revisit the side-channel countermeasures of Dilithium in three directions.
Melissa Azouaoui, Olivier Bronchain, Gaëtan Cassiers, Clément Hoffmann, Yulia Kuzovkova, Joost Renes, Tobias Schneider, Markus Schönauer, François-Xavier Standaert, Christine van Vredendaal   +9 more
doaj   +1 more source

Large-scale programmable assembly of functional micro-components for advanced electronics via light-regulated adhesion and polymer growth

npj Flexible Electronics, 2022
Large-area, programmable assembly of diverse micro-objects onto arbitrary substrates is a fundamental yet challenging task. Herein a simple wafer-level micro-assembly technique based on the light-triggered change in both surface topography and ...
Chan Guo, Zhangxu Pan, Changhao Li, Shenghan Zou, Chao Pang, Jiantai Wang, Jinhua Hu, Zheng Gong   +7 more
doaj   +1 more source

Research Progress in Capping Diamond Growth on GaN HEMT: A Review

Crystals, 2023
With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect.
Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu   +12 more
doaj   +1 more source

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Crystals, 2022
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie, Rongkun Wang   +6 more
doaj   +1 more source