Diverse Responses in Lattice Thermal Conductivity of n-Type/p-Type Wurtzite Semiconductors Driven by Asymmetric Electron-Phonon Interactions. [PDF]
Sun J +11 more
europepmc +1 more source
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
Comparative thermoelastic analysis of semiconductors with an external heat source under three theories. [PDF]
Das B, Islam N, Lahiri A.
europepmc +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source
Advances in Polymeric Semiconductors for Next-Generation Electronic Devices. [PDF]
Lim JW.
europepmc +1 more source
Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus +5 more
wiley +1 more source
Semiconductor Physics and Semiconductor Devices
Kotaro Wakui +2 more
+7 more sources
AI-driven quantitative review of mobility-stability trade-off in oxide semiconductors. [PDF]
Hong JH +14 more
europepmc +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Remarkably High Effective Mobility of 301 cm2/V·s in 3 nm Ultra-Thin-Body SnO2 Transistor by UV Annealing. [PDF]
Shih AC, Zhan YH, Chin A.
europepmc +1 more source

