Results 261 to 270 of about 570,799 (322)
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav +6 more
wiley +1 more source
Highly Ordered T6 Organic Semiconductor Networks on MoS<sub>2</sub> Nanosheets for Optoelectronic Applications. [PDF]
Galizia N +5 more
europepmc +1 more source
Self‐Hybridized Exciton‐Polariton Photodetectors From Layered Metal‐Organic Chalcogenolates
Self‐hybridized exciton‐polariton photodetectors are demonstrated using high refractive index mithrene, eliminating the need for top mirrors. This simplified architecture enables tunable sub‐bandgap photodetection via lower exciton‐polariton states and enhanced carrier transport through ultrafast polariton group velocities.
Bongjun Choi +3 more
wiley +1 more source
Organic photovoltaic microburritos for photo(electro)catalytic peroxide generation.
Tvrdoňová A +3 more
europepmc +1 more source
Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]
Zhu W +15 more
europepmc +1 more source
Temperature-controlling system for high power LEDs based on semiconductor coolers
LI Changguan
openalex +1 more source
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun +11 more
wiley +1 more source
Introduction to ultrafast meets ultrasmall: exploring the uncharted territory of quantum dynamics. [PDF]
Rusimova KR, Siday T, Righetto M.
europepmc +1 more source
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts. [PDF]
Xiang Z, Luo JW, Li SS.
europepmc +1 more source

