Results 31 to 40 of about 351,357 (273)
Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors [PDF]
Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band
Blugel, S. +4 more
core +2 more sources
Semiconductor Quantum Plasmonics [PDF]
We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the electrons constituting the plasmonic response, which is a crucial requirement for quantum plasmonics.
Vasanelli, Angela +5 more
openaire +4 more sources
Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers
Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to ...
Lin Wang +6 more
doaj +1 more source
Interband Light Absorption at a Rough Interface
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous ...
Ando +8 more
core +1 more source
The limited computing resources on edge devices such as Unmanned Aerial Vehicles (UAVs) mean that lightweight object detection algorithms based on convolution neural networks require significant development.
Menghua Cui +6 more
doaj +1 more source
Exploiting Small-Norm Polynomial Multiplication with Physical Attacks
We present a set of physical profiled attacks against CRYSTALS-Dilithium that accumulate noisy knowledge on secret keys over multiple signatures, finally leading to a full key recovery attack. The methodology is composed of two steps.
Olivier Bronchain +4 more
doaj +1 more source
Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent.
Amrit De +3 more
core +1 more source
Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors [PDF]
We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and ...
E. I. Rashba +7 more
core +4 more sources
Semiconductor quantum computation [PDF]
AbstractSemiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In recent decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed.
Zhang, Xin +5 more
openaire +3 more sources
Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based ...
Deng, Kaiming +3 more
core +1 more source

