Results 31 to 40 of about 570,799 (322)

Semiconductor Quantum Plasmonics [PDF]

Physical Review Letters, 2019
We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the electrons constituting the plasmonic response, which is a crucial requirement for quantum plasmonics.
Vasanelli, Angela, Huppert, Simon, Haky, Andrew, Laurent, Thibault, Todorov, Yanko, Sirtori, Carlo   +5 more
openaire   +4 more sources

Magnetic oxide semiconductors

, 2005
Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature.
Ando K, Andrearczyk T, Chambers S A, Chang Y Q, Chien C L, Fukumura T, Giriat W, H Toyosaki, Hong N H, Joh Y G, Kim D S, Kim J H, Kim J H, Kimura H, Kolesnik S, Leiter F, Matsumoto Y, Prellier W, Ren M J, T Fukumura, Tabata H, Toyosaki H Fukumura T Yamada Y Nakajima K Chikyow T Hasegawa T Koinuma H Kawasaki M, Toyosaki H Yamada Y Fukumura T Kawasaki M, Ueda K, Viswanatha R, Wakano T, Y Yamada   +26 more
core   +1 more source

Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

Applied Sciences, 2021
Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to ...
Lin Wang, Zhe Cheng, Zhi-Guo Yu, De-Feng Lin, Zhe Liu, Li-Fang Jia, Yun Zhang   +6 more
doaj   +1 more source

LC-YOLO: A Lightweight Model with Efficient Utilization of Limited Detail Features for Small Object Detection

Applied Sciences, 2023
The limited computing resources on edge devices such as Unmanned Aerial Vehicles (UAVs) mean that lightweight object detection algorithms based on convolution neural networks require significant development.
Menghua Cui, Guoliang Gong, Gang Chen, Hongchang Wang, Min Jin, Wenyu Mao, Huaxiang Lu   +6 more
doaj   +1 more source

Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase

, 2010
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent.
Amrit De, Craig E. Pryor, F. Herman, M. Cohen   +3 more
core   +1 more source

Exploiting Small-Norm Polynomial Multiplication with Physical Attacks

Transactions on Cryptographic Hardware and Embedded Systems
We present a set of physical profiled attacks against CRYSTALS-Dilithium that accumulate noisy knowledge on secret keys over multiple signatures, finally leading to a full key recovery attack. The methodology is composed of two steps.
Olivier Bronchain, Melissa Azouaoui, Mohamed ElGhamrawy, Joost Renes, Tobias Schneider   +4 more
doaj   +1 more source

Semiconductor quantum computation [PDF]

National Science Review, 2018
AbstractSemiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In recent decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed.
Zhang, Xin, Li, Hai-Ou, Cao, Gang, Xiao, Ming, Guo, Guang-Can, Guo, Guo-Ping   +5 more
openaire   +3 more sources

Electronic structure and transport in amorphous metal oxide and amorphous metal oxy-nitride semiconductors

, 2019
Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO)
Bhowmick, Somnath, Gaur, Anshu, Nahas, Suhas, Srivastava, Juhi   +3 more
core   +1 more source

Interband Light Absorption at a Rough Interface

, 1999
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous ...
Ando, Beck, Elliot, Glassford, L. Braginsky, Lockwood, Mo, Schwall, Yamada   +8 more
core   +1 more source

A Simple Photonics-Based Measurement Method for Microwave DFS and AOA

IEEE Photonics Journal, 2022
This article put forwards a simple microwave photonics measurement method for microwave doppler frequency shift (DFS) and angle of arrival (AOA), which obtains the information conveniently and precisely by comparing the frequency and phase shift between ...
Qianqian Jia, Jinye Li, Liangchen Sun, Dechen Li, Jianguo Liu   +4 more
doaj   +1 more source