Results 11 to 20 of about 13,546,865 (288)

Measurement of the surface excitation parameter of Kapton, polyethylene (PE), polymethyl methacrylate (PMMA), polystyrene (PS) and polytetrafluoroethylene (PTFE)

open access: yesSurface and Interface Analysis, Volume 54, Issue 7, Page 681-687, July 2022., 2022
Reflection electron energy loss spectra (REELS) were measured for five insulating organic compounds: Kapton, polyethylene (PE), poly(methyl methacrylate) (PMMA), polystyrene (PS) and polytetrafluoroethylene (PTFE), as well as for Ni and Si, in the energy range between 200 and 1600 eV.
Wolfgang S.M. Werner   +4 more
wiley   +1 more source

In vitro relationships of galactic cosmic radiation and epigenetic clocks in human bronchial epithelial cells

open access: yesEnvironmental and Molecular Mutagenesis, Volume 63, Issue 4, Page 184-189, April 2022., 2022
Abstract Ionizing radiation is a well‐appreciated health risk, precipitant of DNA damage, and contributor to DNA methylation variability. Nevertheless, relationships of ionizing radiation with DNA methylation‐based markers of biological age (i.e. epigenetic clocks) remain poorly understood.
Jamaji C. Nwanaji‐Enwerem   +3 more
wiley   +1 more source

Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth

open access: yesphysica status solidi (a), Volume 219, Issue 4, February 2022., 2022
Herein, the integration of single‐crystalline InSb microstructures on insulator‐covered Si through rapid melt growth (RMG) and the details of the fabrication process are reported. This article is focued on the importance of having a high‐quality conformal capping layer and pristine Si/InSb interface required for achieving single‐crystalline InSb.
Heera Menon   +7 more
wiley   +1 more source

A Platform for Complementary Metal‐Oxide‐Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer

open access: yesAdvanced Photonics Research, Volume 2, Issue 7, July 2021., 2021
The insertion of a thin MgO interlayer for TiN on Si (001) leads to cube‐on‐cube epitaxy of TiN films on Si with significantly improved plasmonic quality. The TiN/MgO/Si structure enables access to the hybrid‐plasmonic‐photonic waveguide platform with sufficiently low losses, and thus long propagation lengths from microns to tens of micrometers, for ...
Kai Ding   +6 more
wiley   +1 more source

Silicon‐Based Photocatalysis for Green Chemical Fuels and Carbon Negative Technologies

open access: yesAdvanced Sustainable Systems, Volume 5, Issue 3, March 2021., 2021
In this review, recent work on silicon‐based photoelectrochemical devices for water splitting and solar‐driven carbon oxide reductions is summarized. Both bias and bias‐free configurations are discussed, commenting the motivations, the challenges, and perspectives related to this field of research, which has large potential to enhance renewable energy ...
Ning Li, Fei Xiang, Andrea Fratalocchi
wiley   +1 more source

All-Si valley-Hall photonic topological insulator [PDF]

open access: yesConference on Lasers and Electro-Optics, 2016
An all-Si photonic structure emulating the quantum-valley-Hall effect is proposed. We show that it acts as a photonic topological insulator (PTI), and that an interface between two such PTIs can support edge states that are free from scattering.
Tzuhsuan Ma, G. Shvets
semanticscholar   +1 more source

Inducing systemic acquired resistance (SAR) against root-knot nematode Meloidogyne javanica and evaluation of biochemical changes in cucumber root

open access: yesHelminthologia, 2022
For inducing systemic acquired resistance (SAR), Salicylic acid (SA), Ascorbic acid (AA), and silicon (Si) were applied on shoots, roots, and both of them simultaneously.
Taher I. E., Ami S. N.
doaj   +1 more source

مطالعة نظری اثر تعداد استخلاف ژرمانیم و سیلیکون در C20 کاسه‌ای بر خواص ترمو الکتریکی [PDF]

open access: yesپژوهش سیستم‌های بس‌ذره‌ای, 2020
امروزه با کاربرد گستردۀ مواد ترموالکتریک، توجه به مطالعۀ تئوریک خواص ترموالکتریکی اهمیت خاصی دارد. در این تحقیق با محاسبۀ ضریب سیبک Sو فاکتور شایستگیZ برای ساختارهای کاسه ای شکل(n=1-5) C20-nGen و C20-nSin، سامانۀ ترموالکتریکیِ مناسب، پیش بینی گردیده است.
فرّخ رؤیا نیکمرام   +1 more
doaj   +1 more source

First principles analysis on the stability of C, Sn atoms near the surface of Ge thin film

open access: yesNihon Kikai Gakkai ronbunshu, 2018
To apply the germanium (Ge) thin film for various electronic devices, energy band structure should be controlled by carbon (C) and/or Tin (Sn) doping. It is important to understand the stable atomic configurations of C and Sn atoms near the (001) surface
Kai TADANO, Koji SUEOKA
doaj   +1 more source

The Status of Sì in Yoruba

open access: yesJournal of Language and Education, 2017
This paper examines the syntax of sentential conjunction in the Yoruba language with the view of ascertaining the actual syntactic function of sì on which opinions have been polarized in the syntax of Yoruba grammar.
Olabode Abimbola
doaj   +1 more source

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