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Tree pollen allergen sensitization: Prevalence, risk factors, and geographic variation in the United States. [PDF]

J Allergy Clin Immunol Glob
Robinson M, Letovsky S, Liu AH, Weber RW, Rafalko JM, Valcour A.   +5 more
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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Applied Physics Letters, 2002
The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in
Scott T. Huxtable, Alexis R. Abramson, Chang-Lin Tien, Arun Majumdar, Chris LaBounty, Xiaofeng Fan, Gehong Zeng, John E. Bowers, Ali Shakouri, Edward T. Croke   +9 more
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SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

Nanotechnology, 2018
In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars.
Mastari, M, Charles, M., Bogumilowicz, Y., Thai, M, Pimenta-Barros, P., Argoud, M, Papon, M, Gergaud, P., Landru, D., Kim, Y, Hartmann, M   +10 more
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Noise in Si/SiGe and Ge/SiGe MODFET

SPIE Proceedings, 2004
The progress of SiGe strained layer heteroepitaxy on virtual buffer substrates has opened up the opportunities for Si-based n- and p-channel HFETs with excellent RF performance. These devices have been reached outstanding high frequency figures of merit with fMAX of 188 GHz and 135 GHz, for the n-HFET and the p-HFET, respectively.
Frederic P. Aniel, Mauro Enciso-Aguilar, Manuel Rodriguez, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Joest-Hans Herzog   +6 more
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Radiation emission from wrinkled SiGe/SiGe nanostructure

Applied Physics Letters, 2010
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity
Fedorchenko, A. I., Cheng, H. H., Sun, Greg, Soref, R. A.   +3 more
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High speed Si/SiGe and Ge/SiGe MODFETs

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers., 2003
The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
F. Aniel, M. Enciso-Aguilar, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J.-H. Herzog, U. Konig   +7 more
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Base current tuning in SiGe HBT's by SiGe in the emitter

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2002
Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced.
H.G.A. Huizing, J.H. Klootwijk, E. Aksen, J.W. Slotboom   +3 more
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?????????????????????? ???????????????????? ????????????????????????? ?????????? ???????????????????????? ???????????????????????????????? ???????????????????? ?????????????????? ???????? ?? ?????????????????? ?????? SiGe/Ge/SiGe

2017
The Subnikov-de Haas oscillations have been investigated in a two-dimensional hole gas in pure germanium quantum well in SiGe/Ge/SiGe heterostructure with the hole concentration p(H) 5,68??10???? ?????? and mobility ??= 4,68??10??? ?????? ?????????????????? in magnetic fields up to 15 T and the temperature range from 40 mK to 4 K.
Mironov, O.A., Myronov, M., Leadley, D.R.   +2 more
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Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

MRS Proceedings, 1992
ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe.
P. J. Wang, Chin-An Chang, B. S. Meyerson, J. O. Chu, M. J. Tejwani   +4 more
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Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016
We report on the layout effects in strained SiGe channel FDSOI pMOSFETS down to 20nm gate length. Two SiGe integration schemes are compared: the SiGe-first approach, with Ge-enrichment performed prior to the STI module and the SiGe-last approach using only a SiGe epitaxy after the STI module.
Berthelon, Rémy, Andrieu, F., Perreau, P., Baylac, E., Pofelski, A., Josse, E., Dutartre, D., Claverie, Alain, Haond, M.   +8 more
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