Results 121 to 130 of about 35,862 (243)
Fabrication and characterisation of novel Ge MOSFETs [PDF]
As high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel ...
Beer, Chris
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Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Optimisation studies on strain-engineered Germanium heterostructures [PDF]
The physical gate lengths of state-of-the-art CMOS devices are 45 nm and are anticipated to reach just 20 nm by 2007. Due to the prohibitive capital expenditure required for next-generation CMOS technologies, leading device manufacturers are now ...
Morris, R. J. H. (Richard J. H.)
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Advanced Materials, Volume 38, Issue 51, 11 September 2026.AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
A high performance photodetector in standard SiGe BiCMOS technology
, 2012 [[abstract]]This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has
Kuang-Sheng Lai;Ji-Cheng Huang;Hsu, K.Y.J.
core +1 more source
Carrier Mobility Enhancement in Two‐Dimensional Semiconductor
Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo +6 more
wiley +1 more source
Diverging in Vivo Immune Response Patterns After Oral Food Challenge in Peanut Allergic Adults
Clinical &Experimental Allergy, Volume 56, Issue 9, Page 1063-1075, September 2026.After the oral food challenge, peanut (PN)‐allergic adults were monitored over 4 weeks, which revealed diverging immune response patterns, with strong responders (SR) exhibiting heightened Ara h 2+ B cell expansion, PN sIgE induction and increasing PN‐specific Tconv. Weak responders (WR) had more activated PN‐specific Tregs.
Florent Fauchère +7 more
wiley +1 more source
, 2007 It has been shown that recessed SiGe source/drain technology enhances the performance of metal oxide semiconductor field effect transistors (MOSFETs), by providing enhanced channel mobility and reduced source/drain contact resistivity.
Chopra, Saurabh
core