Results 141 to 150 of about 109,382 (195)

Oral Immunotherapy-Induced Changes in IgE, IgG, and IgA: A Review of Antibody Isotype Shifts and Their Clinical Relevance in Food Allergy. [PDF]

Antibodies (Basel)
Lasagni G, Vetrugno L, Maggiore CM, Galassetti C, Colo GD, Pavan F, Costantino A, Dagna L.   +7 more
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SiGe device markets

III-Vs Review, 2003
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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Applied Physics Letters, 2002
The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in
Scott T. Huxtable, Alexis R. Abramson, Chang-Lin Tien, Arun Majumdar, Chris LaBounty, Xiaofeng Fan, Gehong Zeng, John E. Bowers, Ali Shakouri, Edward T. Croke   +9 more
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Radiation emission from wrinkled SiGe/SiGe nanostructure

Applied Physics Letters, 2010
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity
Fedorchenko, A. I., Cheng, H. H., Sun, Greg, Soref, R. A.   +3 more
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SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

Nanotechnology, 2018
In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars.
Mastari, M, Charles, M., Bogumilowicz, Y., Thai, M, Pimenta-Barros, P., Argoud, M, Papon, M, Gergaud, P., Landru, D., Kim, Y, Hartmann, M   +10 more
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Noise in Si/SiGe and Ge/SiGe MODFET

SPIE Proceedings, 2004
The progress of SiGe strained layer heteroepitaxy on virtual buffer substrates has opened up the opportunities for Si-based n- and p-channel HFETs with excellent RF performance. These devices have been reached outstanding high frequency figures of merit with fMAX of 188 GHz and 135 GHz, for the n-HFET and the p-HFET, respectively.
Frederic P. Aniel, Mauro Enciso-Aguilar, Manuel Rodriguez, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Joest-Hans Herzog   +6 more
openaire   +1 more source