Results 161 to 170 of about 8,279 (219)

Aeroallergen Sensitization Status in West China from 2024 to 2025. [PDF]

J Clin Med
Guo S, Gao Z, Yan L, Wu Y, Gou Y, Peng L, Duan Y.   +6 more
europepmc   +1 more source

Demonstration of Gliadin Penetration into the Epidermis by Tape Stripping as Prerequisite for Percutaneous Sensitisation in Wheat Allergy. [PDF]

Int J Mol Sci
Kiani CJ, Faihs V, Folda I, Kugler C, Maier B, Yokooji T, Matsuo H, Biedermann T, Scherf KA, Brockow K.   +9 more
europepmc   +1 more source

Does Previous Anaphylaxis Determine Differences Between Patients Undergoing Oral Food Challenges to Cow's Milk and Hen's Egg? [PDF]

Nutrients
Klim L, Michalik M, Wąsowicz P, Cichocka-Jarosz E, Jedynak-Wąsowicz U.   +4 more
europepmc   +1 more source

Concordance between different methods of detecting fungal-specific IgE antibody in asthma. [PDF]

Front Allergy
Shifani N, Denning DW.
europepmc   +1 more source

Outcome Predictors of Oral Food Challenge in Children. [PDF]

Children (Basel)
Berce V, Lonzarić AP, Pelivanova E, Jagodic S.   +3 more
europepmc   +1 more source

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Applied Physics Letters, 2002
The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in
Scott T. Huxtable, Alexis R. Abramson, Chang-Lin Tien, Arun Majumdar, Chris LaBounty, Xiaofeng Fan, Gehong Zeng, John E. Bowers, Ali Shakouri, Edward T. Croke   +9 more
openaire   +1 more source

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

Nanotechnology, 2018
Abstract In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure—chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars.
Mastari, M, Charles, M., Bogumilowicz, Y., Thai, M, Pimenta-Barros, P., Argoud, M, Papon, M, Gergaud, P., Landru, D., Kim, Y, Hartmann, M   +10 more
openaire   +3 more sources

Noise in Si/SiGe and Ge/SiGe MODFET

SPIE Proceedings, 2004
The progress of SiGe strained layer heteroepitaxy on virtual buffer substrates has opened up the opportunities for Si-based n- and p-channel HFETs with excellent RF performance. These devices have been reached outstanding high frequency figures of merit with fMAX of 188 GHz and 135 GHz, for the n-HFET and the p-HFET, respectively.
Frederic P. Aniel, Mauro Enciso-Aguilar, Manuel Rodriguez, Nicolas Zerounian, Paul Crozat, Thomas Hackbarth, Joest-Hans Herzog   +6 more
openaire   +1 more source

High speed Si/SiGe and Ge/SiGe MODFETs

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers., 2003
The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
F. Aniel, M. Enciso-Aguilar, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J.-H. Herzog, U. Konig   +7 more
openaire   +1 more source

Radiation emission from wrinkled SiGe/SiGe nanostructure

Applied Physics Letters, 2010
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity
Fedorchenko, A. I., Cheng, H. H., Sun, Greg, Soref, R. A.   +3 more
openaire   +1 more source