Results 151 to 160 of about 109,382 (195)

?????????????????????? ???????????????????? ????????????????????????? ?????????? ???????????????????????? ???????????????????????????????? ???????????????????? ?????????????????? ???????? ?? ?????????????????? ?????? SiGe/Ge/SiGe

2017
The Subnikov-de Haas oscillations have been investigated in a two-dimensional hole gas in pure germanium quantum well in SiGe/Ge/SiGe heterostructure with the hole concentration p(H) 5,68??10???? ?????? and mobility ??= 4,68??10??? ?????? ?????????????????? in magnetic fields up to 15 T and the temperature range from 40 mK to 4 K.
Mironov, O.A., Myronov, M., Leadley, D.R.   +2 more
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High speed Si/SiGe and Ge/SiGe MODFETs

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers., 2003
The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
F. Aniel, M. Enciso-Aguilar, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J.-H. Herzog, U. Konig   +7 more
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�������������������� �������������������� SiGe BiCMOS ������������������ ������������������������ ������ �������������������� �������������� ��������������������������:

2009
Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
openaire   +1 more source

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2008
, SiGe, . .
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SiGe pMOSFETs Fabricated on Limited Area SiGe Virtual Substrates

MRS Proceedings, 2002
ABSTRACTSilicon germanium pMOSFETs with channel lengths down to 0.4m have been fabricated on limited area silicon germanium virtual substrates. The devices have a 5nm thick Si0.3Ge0.7 active layer grown by MBE on top of relaxed Si0.7Ge0.3 virtual substrate.
Andrew Waite, Urs Straube, Neil Lloyd, Sally Croucher, Yue Teng Tang, Bifeng Rong, Alan Evans, Tim Grasby, Terry Whall, Evan Parker   +9 more
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Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

MRS Proceedings, 1992
ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe.
P. J. Wang, Chin-An Chang, B. S. Meyerson, J. O. Chu, M. J. Tejwani   +4 more
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Anomalous Coiling of SiGe/Si and SiGe/Si/Cr Helical Nanobelts

Nano Letters, 2006
The fabrication of nanohelices by the scrolling of strained bilayers is investigated. It is shown that structure design is dominated by edge effects rather than bulk crystal properties such as the Young's modulus when the dimensions of the structures are reduced below 400 nm. SiGe/Si/Cr, SiGe/Si, and Si/Cr helical nanobelts are used as test structures.
Zhang, Li, Ruh, Elisabeth, Gruetzmacher, Detlev, Dong, Lixin, Bell, Dominik J., Nelson, Bradley J., Schoenenberger, Christian   +6 more
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Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging

Journal of Applied Physics, 2013
Nanometer-scale scanning moiré fringes (SMFs) of the hetero interfaces in Si/Si1−xGex/Si1−xGex/Si1−xGex multi-layers have been obtained by high-angle annular dark field scanning transmission electron microscope. The SMFs that appeared at each interface were commensurate, when the layers had no defects from epitaxial growth.
Suhyun Kim, Sungho Lee, Yukihito Kondo, Kyungwoo Lee, Gwangsun Byun, Sunyoung Lee, Kyupil Lee   +6 more
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???????????????????????? ?????????????????? ???????????????????? ???????????????????? SiGe, ???????????????????????? ?????? ???????????????? ???????????????????? ??????????????

2013
?????????????????? ???????????????????? ???????????????????????? ?????????????? ?????????????????? ??-???????????????? ???????????? ???? 1??10????? ????????? ?? ???????????????????? ???????? ?? ?????????????????? ???? 14 ???? ???? ???????????????????????????????????? ???????????????????? ???????????????????? Si1-xGex ?? ?????????????????? ??????????????
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?????????????????????????????????????? ???????????? ???????????????? ?? ?????????????????????? ???? ???????????? ?????????????? ?????????????????? SiGe

2014
?????????????????? ???????????????????????????????? ???????????? ?????? ?????????????????? ???????????????? ?? ?????????????????????? ?? ???????????????????? ?????????????????????????? ???????????????????? ?????????????????????????? ?????????????????????????????? ???? ??????????????????????.
openaire   +1 more source