Results 171 to 180 of about 8,279 (219)

Base current tuning in SiGe HBT's by SiGe in the emitter

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2002
Npn-type SiGe heterojunction bipolar transistors (HBT's) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced.
H.G.A. Huizing, J.H. Klootwijk, E. Aksen, J.W. Slotboom   +3 more
openaire   +1 more source

?????????????????????? ???????????????????? ????????????????????????? ?????????? ???????????????????????? ???????????????????????????????? ???????????????????? ?????????????????? ???????? ?? ?????????????????? ?????? SiGe/Ge/SiGe

2017
The Subnikov-de Haas oscillations have been investigated in a two-dimensional hole gas in pure germanium quantum well in SiGe/Ge/SiGe heterostructure with the hole concentration p(H) 5,68??10???? ?????? and mobility ??= 4,68??10??? ?????? ?????????????????? in magnetic fields up to 15 T and the temperature range from 40 mK to 4 K.
Mironov, O.A., Myronov, M., Leadley, D.R.   +2 more
openaire   +3 more sources

Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

MRS Proceedings, 1992
ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe.
P. J. Wang, Chin-An Chang, B. S. Meyerson, J. O. Chu, M. J. Tejwani   +4 more
openaire   +1 more source

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016
We report on the layout effects in strained SiGe channel FDSOI pMOSFETS down to 20nm gate length. Two SiGe integration schemes are compared: the SiGe-first approach, with Ge-enrichment performed prior to the STI module and the SiGe-last approach using only a SiGe epitaxy after the STI module.
Berthelon, Rémy, Andrieu, F., Perreau, P., Baylac, E., Pofelski, A., Josse, E., Dutartre, D., Claverie, Alain, Haond, M.   +8 more
openaire   +2 more sources

???????????????????????? ?????????????????? ???????????????????? ???????????????????? SiGe, ???????????????????????? ?????? ???????????????? ???????????????????? ??????????????

2013
?????????????????? ???????????????????? ???????????????????????? ?????????????? ?????????????????? ??-???????????????? ???????????? ???? 1??10????? ????????? ?? ???????????????????? ???????? ?? ?????????????????? ???? 14 ???? ???? ???????????????????????????????????? ???????????????????? ???????????????????? Si1-xGex ?? ?????????????????? ??????????????
openaire   +3 more sources

Anomalous Coiling of SiGe/Si and SiGe/Si/Cr Helical Nanobelts

Nano Letters, 2006
The fabrication of nanohelices by the scrolling of strained bilayers is investigated. It is shown that structure design is dominated by edge effects rather than bulk crystal properties such as the Young's modulus when the dimensions of the structures are reduced below 400 nm. SiGe/Si/Cr, SiGe/Si, and Si/Cr helical nanobelts are used as test structures.
Zhang, Li, Ruh, Elisabeth, Gruetzmacher, Detlev, Dong, Lixin, Bell, Dominik J., Nelson, Bradley J., Schoenenberger, Christian   +6 more
openaire   +4 more sources

ChemInform Abstract: Selective Etching of SiGe on SiGe/Si Heterostructures

ChemInform, 1991
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
G. K. CHANG, T. K. CARNS, S. S. RHEE, K. L. WANG   +3 more
openaire   +1 more source

Channeling studies of implantation damage in SiGe superlattices and SiGe alloys

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
Abstract Recent studies have shown a large difference in damage rate between the Si and the SiGe layers of strained-layer superlattices. In order to understand this phenomenon, we have measured amorphisation rates in strained SiGe layers of different composition grown on both Ge and Si substrates and compared these with the damage rates in a pure Si ...
M. Vos, C. Wu, I.V. Mitchell, T.E. Jackman, J.-M. Baribeau, J.P. McCaffrey   +5 more
openaire   +1 more source

?????????????????????????????????????? ???????????? ???????????????? ?? ?????????????????????? ???? ???????????? ?????????????? ?????????????????? SiGe

2014
?????????????????? ???????????????????????????????? ???????????? ?????? ?????????????????? ???????????????? ?? ?????????????????????? ?? ???????????????????? ?????????????????????????? ???????????????????? ?????????????????????????? ?????????????????????????????? ???? ??????????????????????.
openaire   +1 more source

Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing

Journal of Materiomics, 2023
Ying Peng, Chengyan Liu, Lei Miao
exaly