Results 11 to 20 of about 108,870 (245)
Медицинский вестник Юга России, 2022 Anaphylaxis is a severe, life-threatening, systemic hypersensitivity reaction that develops rapidly and can lead to death. The diagnosis of anaphylaxis continues to be primarily clinical.
N. V. Esakova +2 more
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Педиатрическая фармакология, 2021 Background. One of the key aspects in the development of atopic dermatitis (AtD) is epidermal barrier dysfunction leading to the penetration of pathogens and allergens through the skin with further body sensibilisation to them.
Dmitri V. Fedorov +3 more
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Žurnal Grodnenskogo Gosudarstvennogo Medicinskogo Universiteta, 2022 Введение. Аллергия к клещам домашней пыли широко распространена во всем мире. Анализ иммунного ответа к Dermatophagoides pteronyssinus вносит вклад в понимание закономерностей IgE-опосредованного ответа у пациентов с аллергией к клещу домашней пыли ...
R. N. Khokha +4 more
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Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]
Exploration of Asthma & Allergy, 2023 Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs +4 more
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IEEE Journal of the Electron Devices Society, 2021 We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao +3 more
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Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Nanomaterials, 2021 In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li +9 more
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The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application
ASM Science Journal, 2022 This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen
ABDUL ISMAIL ABDUL RANI +4 more
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Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
Materials Research Express, 2021 In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li +7 more
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Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells [PDF]
, 2011 A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs).
Boykin, Timothy +3 more
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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers [PDF]
, 2008 We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform.
Bardin, Joseph C. +7 more
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