Results 31 to 40 of about 109,382 (195)
Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition. [PDF]
, 2020 Silicon germanium (SiGe) is a multifunctional material considered for quantum computing, neuromorphic devices, and CMOS transistors. However, implementation of SiGe in nanoscale electronic devices necessitates suppression of surface states dominating the
Aoki, Toshihiro +9 more
core
SiGe HMOSFET differential pair [PDF]
ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2002 A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results
Michelakis, K +5 more
openaire +3 more sources
Low Levels Matter: Clinical Relevance of Low Pru p 3 sIgE in Patients With Peach Allergy
Frontiers in Allergy, 2022 Many clinical lab settings still use 0.35 KUA/L as the cut-off for serum specific-IgE (sIgE) immunoassays, while the detection limit is 0.1 KUA/L. The clinical relevance of -low-level sIgE (0.1–0.35 KUA/L) remains controversial.
Sara Balsells-Vives +19 more
doaj +1 more source
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
, 2010 In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs.
Bersuker, Gennadi +7 more
core +1 more source
Clinical and Translational Allergy, 2021 Background Allergic rhinitis (AR), allergic conjunctivitis (AC), and asthma composing multiple phenotypes and improved understanding of these phenotypes and their respective risk factors are needed.
Susan Mikkelsen +19 more
doaj +1 more source
Monte Carlo investigation of optimal device architectures for SiGe FETs [PDF]
, 1998 Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care.
Asenov, A. +4 more
core +1 more source
IEEE Photonics Journal, 2022 We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance ...
Saranisorn Srikam +3 more
doaj +1 more source
A tunable X-band SiGe HBT single stage cascode LNA [PDF]
, 2010 This paper presents an X-band silicon-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased array transmit/receive modules.
Doğan, Mustafa, Tekin, İbrahim
core +1 more source
IEEE Journal of the Electron Devices Society, 2019 In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. It is required to etch Si and SiGe simultaneously for Si/SiGe dual channel Fin-FETs.
Y. Ishii +5 more
doaj +1 more source
Spin and valley-orbit splittings in SiGe/Si heterostructures
, 2006 Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number ...
Golub, L. E. +2 more
core +1 more source