Results 31 to 40 of about 35,862 (243)

SiGe: a promise into reality?

open access: yes1995 International Semiconductor Conference. CAS '95 Proceedings, 1995
The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterojunction bipolar transistors (HBTs) as an example.
H.G. Grimmeiss, J. Olajos, J. Engval
openaire   +1 more source

Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter [PDF]

open access: yes, 2009
The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage gain of a push-pull inverting amplifier is assessed by technology-computer-aided-design (TCAD)
O'Neill, Anthony G.   +3 more
core   +1 more source

The Precision Allergy Molecular Diagnosis (PAMD@) in Monitoring the Atopic March in a Child with a Primary Food Allergy: Case Report

open access: yesJournal of Asthma and Allergy, 2022
Izabela Knyziak-Mędrzycka,1,2 Monika Szychta,3 Emilia Majsiak,4 Andrzej M Fal,2,5,6 Zbigniew Doniec,7 Bożena Cukrowska8 1Allergy Clinic, Children’s Memorial Health Institute, Warsaw, Poland; 2The Department of Allergy, Pulmonary Diseases and ...
Knyziak-Mędrzycka I   +5 more
doaj  

Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications [PDF]

open access: yes, 2003
Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping ...
Watling, J. R.   +20 more
core   +1 more source

Rolled up si-based three dimensional micro-/nanostructures for MEMS/NEMS [PDF]

open access: yes, 2008
Recently, by combination of the “top down” and “bottom up” approaches, a new strategy to fabricate 3D micro-/nanostructures named self-scrolling technique has been introduced by Prinz et al. in 1999.
Zhang, Li
core   +1 more source

Low Levels Matter: Clinical Relevance of Low Pru p 3 sIgE in Patients With Peach Allergy

open access: yesFrontiers in Allergy, 2022
Many clinical lab settings still use 0.35 KUA/L as the cut-off for serum specific-IgE (sIgE) immunoassays, while the detection limit is 0.1 KUA/L. The clinical relevance of -low-level sIgE (0.1–0.35 KUA/L) remains controversial.
Sara Balsells-Vives   +19 more
doaj   +1 more source

Combinations of self‐reported rhinitis, conjunctivitis, and asthma predicts IgE sensitization in more than 25,000 Danes

open access: yesClinical and Translational Allergy, 2021
Background Allergic rhinitis (AR), allergic conjunctivitis (AC), and asthma composing multiple phenotypes and improved understanding of these phenotypes and their respective risk factors are needed.
Susan Mikkelsen   +19 more
doaj   +1 more source

Nanomaterials for Allergy Diagnosis and Treatment: Advances, Opportunities and Translational Challenges

open access: yesAdvanced Science, EarlyView.
Nanomaterials offer dual applications in allergy management. For diagnosis, nanomaterials enhance analytical sensitivity and improve detection in specific IgE and functional assays such as the basophil activation test (BAT). For allergen‐specific immunotherapy, nanomaterials enable allergen masking and controlled release, and effectively modulate the ...
Madiha Habib   +8 more
wiley   +1 more source

Transport models and advanced numerical simulation of silicon-germanium heterojunction bipolar transistors [PDF]

open access: yes, 2010
Applications in the emerging high-frequency markets for millimeter wave applications more and more use SiGe components for cost reasons. To support the technology effort, a reliable TCAD platform is required.
Sasso, Grazia
core   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

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