Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors [PDF]
32nd European Solid-State Device Research Conference, 2002 This paper reports a method of controlling the gain of a bipolar transistor by incorporating Ge in the polysilicon emitter. Measured results show that varying the Ge content in the polySiGe from 0 to 33% gives a change in base current of approximately four.
Kunz, V.D. +5 more
core +4 more sources
Exposome-driven molecular sensitization signatures in pediatric rhinitis and asthma across Spanish regions. [PDF]
Pediatr Allergy ImmunolAbstract Background Allergic rhinitis and asthma in childhood arise from dynamic interactions between genetic predisposition and the exposome. However, how environmental heterogeneity shapes molecular IgE sensitization profiles during early life remains insufficiently characterized.
Álvaro-Lozano M +22 more
europepmc +2 more sources
Development and pilot validation of a chemiluminescence immunoassay for monitoring immunologic changes during peanut oral immunotherapy using sIgE/sIgG4 ratio [PDF]
Frontiers in AllergyBackgroundThe sIgE/sIgG4 ratio has been proposed as a dynamic measure of immune modulation during peanut oral immunotherapy (OIT). This study evaluated a chemiluminescent immunoassay for simultaneous quantification of peanut-specific sIgE and sIgG4 on ...
Xiao Yang +8 more
doaj +2 more sources
Taste aversion and adverse events contribute equally to OIT discontinuation in children: A real-world multi-allergen analysis. [PDF]
Pediatr Allergy ImmunolOverview of discontinuation in a prospective real‐world pediatric OIT cohort, illustrating overall discontinuation, timing and dose at treatment cessation, clinical patterns associated with different reasons for discontinuation, and variation in discontinuation rates across individual food allergens. Abstract Background Although oral immunotherapy (OIT)
Maria B +3 more
europepmc +2 more sources
RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study [PDF]
, 1997 No abstract ...
Barker, J.R. +4 more
core +8 more sources
Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
Materials Research Express, 2021 In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li +7 more
doaj +1 more source
Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]
Exploration of Asthma & Allergy, 2023 Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao +3 more
doaj +1 more source
SiGe HMOSFET differential pair [PDF]
ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2002 A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results
Kostis Michelakis +5 more
openaire +4 more sources
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Nanomaterials, 2021 In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li +9 more
doaj +1 more source