Results 11 to 20 of about 109,382 (195)
Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface.
Charles Tahan +14 more
core +2 more sources
Введение. Аллергия к клещам домашней пыли широко распространена во всем мире. Анализ иммунного ответа к Dermatophagoides pteronyssinus вносит вклад в понимание закономерностей IgE-опосредованного ответа у пациентов с аллергией к клещу домашней пыли ...
R. N. Khokha +4 more
doaj +1 more source
Si-based thermoelectric (TE) materials are exhibiting remarkable perspectives in self-energized applications with their special advantages. However, the relatively high total thermal conductivity (κ) prevents their TE enhancement.
Huajun Lai +8 more
doaj +1 more source
The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application
This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen
ABDUL ISMAIL ABDUL RANI +4 more
doaj +1 more source
Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li +7 more
doaj +1 more source
Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]
Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs +4 more
doaj +1 more source
We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao +3 more
doaj +1 more source
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li +9 more
doaj +1 more source
Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells [PDF]
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs).
Boykin, Timothy +3 more
core +3 more sources
SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers [PDF]
We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform.
Bardin, Joseph C. +7 more
core +1 more source

