Results 11 to 20 of about 8,279 (219)
Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices [PDF]
AIP Advances, 2016 We present a predictive Boltzmann model for the cross-plane thermal conductivity in superlattices. The developed model considers particle-like phonons exhibiting wave characteristics at the interfaces and makes the assumption that the phonon heat transport in a superlattice has a mixed character.
M. Hijazi, M. Kazan
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Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
Materials Research Express, 2021 In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li +7 more
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Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]
Exploration of Asthma & Allergy, 2023 Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs +4 more
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IEEE Journal of the Electron Devices Society, 2021 We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao +3 more
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SiGe HMOSFET differential pair [PDF]
ISCAS 2001. The 2001 IEEE International Symposium on Circuits and Systems (Cat. No.01CH37196), 2002 A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results
Kostis Michelakis +5 more
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Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Nanomaterials, 2021 In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li +9 more
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Characteristics of SiGe Thin Film Resistors in SiGe ICs [PDF]
Journal of the Korean Vacuum Society, 2007 SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits.
Sang-Heung Lee +2 more
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THERMOELECTRIC PROPERTIES OF SiGe WHISKERS
Information and Telecommunication Sciences, 2016 Background. Si1-xGex solid solution whiskers with low germanium content have maximum ratio of mobility to the phonon thermal conductivity, which is promising for thermoelectrics.
Anatoly Druzhinin +2 more
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Modeling Si/SiGe/Si Quantum Well Solar Cell Using Different Well Width and Mole Fraction
Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems), 2016 Quantum Well Solar Cell ( QWSC) was proposed as a means to achieve higher efficiencies compare with conventional monolithic solar cell structures. Quantum well formed by adding lower band gap material within intrinsic region of p-i-n solar cell with less
Raden Arief Setyawan
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Frontiers in Immunology, 2022 BackgroundCow’s milk protein allergy (CMPA) is a common allergy. Immunoglobulin E (IgE)-mediated cow’s milk allergy is associated with a high mortality risk and poor prognosis.
Rui Tang +10 more
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