Results 11 to 20 of about 109,382 (195)

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

open access: yes, 2006
We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface.
Charles Tahan   +14 more
core   +2 more sources

IGE АНТИТЕЛА К МАЖОРНЫМ КОМПОНЕНТАМ АЛЛЕРГЕНА КЛЕЩА ДОМАШНЕЙ ПЫЛИ DER P1 И DER P2 У ДЕТЕЙ С АЛЛЕРГИЕЙ

open access: yesŽurnal Grodnenskogo Gosudarstvennogo Medicinskogo Universiteta, 2022
Введение. Аллергия к клещам домашней пыли широко распространена во всем мире. Анализ иммунного ответа к Dermatophagoides pteronyssinus вносит вклад в понимание закономерностей IgE-опосредованного ответа у пациентов с аллергией к клещу домашней пыли ...
R. N. Khokha   +4 more
doaj   +1 more source

Thermoelectric enhancement of p-type Si80Ge20 alloy via co-compositing of dual oxides: Respective regulation for power factor and thermal conductivity by β-Ga2O3 and SiO2 aerogel powders

open access: yesJournal of Advanced Ceramics, 2023
Si-based thermoelectric (TE) materials are exhibiting remarkable perspectives in self-energized applications with their special advantages. However, the relatively high total thermal conductivity (κ) prevents their TE enhancement.
Huajun Lai   +8 more
doaj   +1 more source

The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application

open access: yesASM Science Journal, 2022
This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen
ABDUL ISMAIL ABDUL RANI   +4 more
doaj   +1 more source

Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate

open access: yesMaterials Research Express, 2021
In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li   +7 more
doaj   +1 more source

Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]

open access: yesExploration of Asthma & Allergy, 2023
Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs   +4 more
doaj   +1 more source

Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs

open access: yesIEEE Journal of the Electron Devices Society, 2021
We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao   +3 more
doaj   +1 more source

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

open access: yesNanomaterials, 2021
In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel FinFET is presented.
Yongliang Li   +9 more
doaj   +1 more source

Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells [PDF]

open access: yes, 2011
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs).
Boykin, Timothy   +3 more
core   +3 more sources

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers [PDF]

open access: yes, 2008
We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform.
Bardin, Joseph C.   +7 more
core   +1 more source

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