Results 11 to 20 of about 8,143 (163)
Si-based thermoelectric (TE) materials are exhibiting remarkable perspectives in self-energized applications with their special advantages. However, the relatively high total thermal conductivity (κ) prevents their TE enhancement.
Huajun Lai +8 more
doaj +1 more source
Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices [PDF]
We present a predictive Boltzmann model for the cross-plane thermal conductivity in superlattices. The developed model considers particle-like phonons exhibiting wave characteristics at the interfaces and makes the assumption that the phonon heat transport in a superlattice has a mixed character.
M. Hijazi, M. Kazan
openaire +2 more sources
The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application
This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen
ABDUL ISMAIL ABDUL RANI +4 more
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Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially ...
Yongliang Li +7 more
doaj +1 more source
Omega-5-gliadin-specific immunoglobulin E-positive, but wheat-specific immunoglobulin E-negative wheat allergy dependent on augmentation factors—a frequent presentation [PDF]
Aim: Most patients with wheat allergy dependent on augmentation factors (WALDA) show specific immunoglobulin E (sIgE) to ω5-gliadin. However, some WALDA patients may show negative results when testing for sIgE to total wheat extract.
Valentina Faihs +4 more
doaj +1 more source
SiGe HMOSFET differential pair [PDF]
A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results
Kostis Michelakis +5 more
openaire +4 more sources
We investigated the formation mechanism of a rounded silicon-germanium (SiGe)-etch front (rounding) in gate-all-around field-effect transistor (GAA-FET) manufacturing.
Yu Zhao +3 more
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THERMOELECTRIC PROPERTIES OF SiGe WHISKERS
Background. Si1-xGex solid solution whiskers with low germanium content have maximum ratio of mobility to the phonon thermal conductivity, which is promising for thermoelectrics.
Anatoly Druzhinin +2 more
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Characteristics of SiGe Thin Film Resistors in SiGe ICs [PDF]
SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits.
Sang-Heung Lee +2 more
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BackgroundCow’s milk protein allergy (CMPA) is a common allergy. Immunoglobulin E (IgE)-mediated cow’s milk allergy is associated with a high mortality risk and poor prognosis.
Rui Tang +10 more
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