Results 41 to 50 of about 35,862 (243)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Self‐Assembled Telecom Color Centers in Silicon and Their Growth Environment

Advanced Physics Research, EarlyView.
Influence of the growth pressure during the formation of self‐assembled color centers in silicon grown by molecular beam epitaxy at ultra‐low temperatures on the color center's photoluminescence spectral signature. The growth pressure crucially determines color center selectivity, as evidenced by G‐centers, W‐centers, and T‐centers, matrix purity, and ...
Jacqueline Marböck, Enrique Prado Navarrete, Merve Karaman, Oliver E. Lang, S. Mijatovic, Thomas Fromherz, Maciej O. Liedke, Andreas Wagner, Moritz Brehm, Johannes Aberl   +9 more
wiley   +1 more source

Diffusion‐Governed Growth Mechanisms of Epitaxial GaAs Islands on CMOS‐Compatible Si(001) Nanotip Arrays

Advanced Physics Research, EarlyView.
The mechanism and kinetics of selective GaAs growth on Si nanotip wafers via nanoheteroepitaxy were investigated as a function of pitch (center‐to‐center nanotip spacing). The pitch dependence reveals distinct surface‐diffusion‐controlled regimes, demonstrating that lateral Ga adatom transport on the SiO2 mask governs material redistribution and ...
Adriana Rodrigues, Anagha Kamath, Navid Kafi, Oliver Skibitzki, Kristiane Elsner, Martin Schmidbauer, Fariba Hatami   +6 more
wiley   +1 more source

Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

IEEE Journal of the Electron Devices Society, 2019
In this study, we discuss Si-SiGe etch characteristics as well as SiGe surface composition modification. It is required to etch Si and SiGe simultaneously for Si/SiGe dual channel Fin-FETs.
Y. Ishii, Y.-J. Lee, W.-F. Wu, K. Maeda, H. Ishimura, M. Miura   +5 more
doaj   +1 more source

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

IEEE Photonics Journal, 2022
We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance ...
Saranisorn Srikam, Worawat Traiwattanapong, Pichet Limsuwan, Papichaya Chaisakul   +3 more
doaj   +1 more source

Strain‐Tunable Photoluminescence From Ge Quantum Dots on Si Nanotips for CMOS‐Compatible Photonics

Advanced Physics Research, EarlyView.
This work studies strain in Ge quantum dots grown on Si nanotips using photoluminescence, X‐ray diffraction, and band structure calculations. It shows how emission changes with dot size, evaluates strain in the dot and substrate, and explains the role of direct and indirect transitions in the optical behavior.
Diana Ryzhak, Johannes Aberl, Enrique Prado‐Navarrete, Lada Vukušić, Oliver Skibitzki, Petr Klenovský, Marvin Hartwig Zoellner, Markus Andreas Schubert, Moritz Brehm, Davide Spirito, Giovanni Capellini   +10 more
wiley   +1 more source

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter, Lamb, Andrew C., Bonar, J.M., Cristiano, Fuccio, Hemment, Peter L. F., Hall, Stephen, Schiz, J.F.W.   +6 more
core   +1 more source

Scaling Up Molecular Electron Spin Qubits Around a Core‐Shell Quantum Dot

Chemistry – A European Journal, EarlyView.
Making assemblies of molecular nanomagnet (MNM) qubits is an essential step toward scalable quantum devices. Here, SH‐functionalized {Cr7Ni} antiferromagnetic rings with ability as MNM qubits were successfully grafted to the surface of fluorescent CdSe/ZnS quantum dots (QD).
Simon G. McAdams, Jesus Ferrando‐Soria, Paul D. McNaughter, Edward A. Lewis, Sarah J. Haigh, David J. Lewis, Richard E. P. Winpenny, Paul O'Brien, Floriana Tuna   +8 more
wiley   +1 more source

A Code‐Invariant QSG–VGA Co‐Design Methodology for Compact CMOS Vector‐Sum Phase Shifters

International Journal of Circuit Theory and Applications, EarlyView.
A circuit‐level co‐design methodology for compact vector‐sum phase shifters is presented, combining a code‐invariant common‐gate variable‐gain amplifier (VGA) with a resistorless quadrature signal generator (QSG). By maintaining an almost constant input resistance, explicit resistors are eliminated from the QSG.
Uxua Esteban Eraso, Carlos Sánchez‐Azqueta, Francisco Aznar, Concepción Aldea, Santiago Celma   +4 more
wiley   +1 more source

Dislocation- and crosshatch-free high-mobility silicon two-dimensional electron gases [PDF]

APL Materials
Si/SiGe heterostructures play pivotal roles in both gate-all-around technology for integrated circuits and spin qubits for quantum computing. Here, we report dislocation-free Si/SiGe heterostructures grown via molecular beam epitaxy on strain-relaxed ...
Jie-Yin Zhang, Fang-Ze Liu, Ming Ming, Liang-Xin Liao, Xin-Yu Zhou, Jian-Jun Zhang   +5 more
doaj   +1 more source