Results 41 to 50 of about 8,143 (163)

Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

APL Materials, 2016
Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while
Amin Nozariasbmarz, Palash Roy, Zahra Zamanipour, J. Houston Dycus, Matthew J. Cabral, James M. LeBeau, Jerzy S. Krasinski, Daryoosh Vashaee   +7 more
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Comparative study of clinical symptoms of chronic rhinosinusitis with nasal polyps patients

Immunity, Inflammation and Disease, 2023
Aim The aim of this study is to explore the clinical characteristics in chronic rhinosinusitis with nasal polyps (CRSwNP) patients with different serum specific IgE (SIgE) and eosinophilic granulocyte infiltration status.
Jingmin Hu, Le Wang, Ruixia Ma
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Prática SIGE

, 2023
Pratica 2 de SIGE, referente al Máster en Ingenieria Informática de la UGR.
openaire   +2 more sources

Allergen-specific IgE/total IgE ratio for food allergy diagnosis in children

Frontiers in Pediatrics
BackgroundThis study aimed to assess the relationship of allergen-specific IgE (sIgE) levels and the ratio of sIgE to total IgE (sIgE/tIgE) with the results of the oral food challenge (OFC).MethodsWe retrospectively analysed the medical records of ...
Xiao Xu, Ling Liu, Yuedi Zhang, Pengxiang Zhou, Pengxiang Zhou, Pan Wang, Pan Wang, Jiansuo Zhou, Wei Zhou   +8 more
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Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

APL Materials, 2014
Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials.
David J. Rowe, Uwe R. Kortshagen
doaj   +1 more source

A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement

IEEE Access
In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of sub-fin recess during channel release in conventional SiGe (C-SiGe ...
Yan Li, Jiayi Zhang, Haoyan Liu, Yongliang Li   +3 more
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ANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTURE

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the ...
O. I. Velichko, V. V. Aksenov
doaj  

Identification of the primary sensitizing mite (dominant mite) in patients with allergic respiratory disease sensitized to Dermatophagoides pteronyssinus and Lepidoglyphus destructor

World Allergy Organization Journal
Objective: To identify the dominant mite in patients with allergic respiratory disease (ARD) and double sensitization to Dermatophagoides pteronyssinus (Dpt) and Lepidoglyphus destructor (Ld).
José Arias-Irigoyen, MD, Irene Arias-Talavera, MD, Manuel Lombardero, PhD, Agustín Galán, BSc, Rafael I. Monsalve, PhD   +4 more
doaj   +1 more source

Associations of Protein Classes With Cross-Reactivity and Cross-Sensitization in Furry Animal Allergens: A Component-Resolved Diagnostics Study

Journal of Asthma and Allergy
Jiancai Lu,1,* Huiqing Zhu,2,* Qingqing Yang,1 Yunjian Xu,1 Zhifeng Huang,1 Baoqing Sun1 1Department of Clinical Laboratory, National Center for Respiratory Medicine, National Clinical Research Center for Respiratory Disease, State Key Laboratory
Lu J, Zhu H, Yang Q, Xu Y, Huang Z, Sun B   +5 more
doaj  

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Frontiers in Materials, 2016
We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate.
Wei-Ting eLai, Kuo-Ching eYang, Po-Hsiang eLiao, Tom eGeorge, Pei-Wen eLi, Pei-Wen eLi   +5 more
doaj   +1 more source