Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures [PDF]
, 2004 Analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6 k·p model, and then used to find carrier relaxation rates due ...
Harrison P. +3 more
core +1 more source
Coordination and Conflict: The Persistent Relevance of Networks in International Financial Regulation [PDF]
, 2015 This thesis presents SiGe(C)/Si(C) multi quantum well (MQW) layers individually or in combination with Si(C) Schottky diodes as material structures to detect infrared (IR) radiation.
Ahdieh, Robert B.
core +1 more source
Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
, 2009 Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant.
D. D. Awschalom +14 more
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Characteristics of SiGe Thin Film Resistors in SiGe ICs [PDF]
Journal of the Korean Vacuum Society, 2007 SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits.
Sang-Heung Lee +2 more
openaire +1 more source
Sputtered Gold as an Effective Schottky Gate for Strained Si/SiGe Nanostructures
, 2006 Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas (2DEG) at a relatively small voltage while maintaining an extremely low level of leakage current.
Croke, E. T. +4 more
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Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks [PDF]
, 2010 The self-gain of surface channel compressively strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks is investigated for a range of gate lengths down to 55 nm.
Alatise, Olayiwola M. +3 more
core +1 more source
Decoherence of electron spin qubits in Si-based quantum computers
, 2002 Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state ...
B. Kane +23 more
core +1 more source
A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]
, 2003 The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P. +7 more
core +1 more source
Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure [PDF]
Journal of Applied Physics, 2009 Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer.
Drichko, I. L. +6 more
openaire +2 more sources
Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots [PDF]
, 2006 In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field ...
Hartmann, J. -M. +4 more
core +4 more sources