Results 51 to 60 of about 109,382 (195)

Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation

Materials Research Express, 2021
The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work.
Yanrong Wang, Yongliang Li, Xiaohong Cheng, Hanxiang Wang, Qide Yao, Jing Zhang, Wenkai Liu, Guilei Wang, Jiang Yan, Wenwu Wang   +9 more
doaj   +1 more source

Paper-based Colorimetric Sensor for Detection of Shrimp Allergenic Component sIgE in Serum

Shipin gongye ke-ji
Objective: In this study, a paper-based colorimetric sensor was constructed and applied to detect the specific immunoglobulin E (sIgE) of shrimp allergic patients.
Hong LIU, Huilin ZHANG, Qingmei LIU, Qiaoqin CHEN, Yanyun LIU, Guangming LIU   +5 more
doaj   +1 more source

Ovomucoid Specific Immunoglobulin E as a Predictor of Tolerance to Cooked Egg

Allergy & Rhinology, 2015
Background Ovomucoid is the dominant allergen in hen's egg. Although several studies evaluated the utility of ovomucoid specific immunoglobulin E (sIgE) levels in predicting baked (e.g., muffin or cupcake) or raw egg food challenge outcomes, studies that
Lisa M. Bartnikas M.D., William J. Sheehan M.D., Katherine L. Tuttle M.D., Carter R. Petty M.A., Lynda C. Schneider M.D., Wanda Phipatanakul M.D., M.S.   +5 more
doaj   +1 more source

Using time-resolved fluorescence to measure serum venom-specific IgE and IgG. [PDF]

PLoS ONE, 2011
We adapted DELFIA™ (dissociation-enhanced lanthanide fluoroimmunoassay), a time resolved fluorescence method, to quantitate whole venom specific and allergenic peptide-specific IgE (sIgE), sIgG(1) and sIgG(4) in serum from people clinically allergic to ...
Pauline E van Eeden, Michael D Wiese, Susan Aulfrey, Belinda J Hales, Shelley F Stone, Simon G A Brown   +5 more
doaj   +1 more source

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

, 2019
The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 degree C. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG) structure was ...
Ilango, S., Mathews, T., Sain, Twisha, Singh, Ch. Kishan   +3 more
core   +1 more source

Ballistic one-dimensional holes with strong g-factor anisotropy in germanium [PDF]

, 2018
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e2/h.
De Franceschi, S., Maurand, R., Mizokuchi, R., Myronov, Maksym, Vigneau, F.   +4 more
core   +5 more sources

A large-scale retrospective study on sIgE antibodies for food and inhalant allergens in children from Hebei Province from 2016 to 2019

Zhongguo shipin weisheng zazhi
ObjectiveTo retrospectively analyze the specific immunoglobulin E （sIgE） antibody test results of seven inhalant allergens and seven food allergens in children from Hebei Province， and to provide a scientific basis for the prevention and management of ...
ZHU Huilin, WU Xiaomeng
doaj   +1 more source

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

EPJ Web of Conferences, 2017
In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector.
Abd Rahim Alhan Farhanah, Zainal Badri Nur’Amirah, Radzali Rosfariza, Mahmood Ainorkhilah   +3 more
doaj   +1 more source

Characterization of SiGe/Si Heterostructures Formed by Ge+ and C+ Implantation [PDF]

, 1990
Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed.
Fukami, Akira, Nagano, Takahiro, Shoji, Ken-Ichi, Yang, Cary Y.   +3 more
core   +1 more source

Calculation of thermal parameters of SiGe microbolometers

, 2012
The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K
A. P. Babychev, A. Rogalskii, A. V. Voitsekhovskii, D. Liang, D. V. Grigoryev, E. T. Swartz, J. E. Murguia, J. L. Tissot, J. P. Dismukes, N. N. Kalitkin, S. N. Nesmelov, V. A. Yuryev, V. N. Leonov   +12 more
core   +1 more source