Results 71 to 80 of about 109,382 (195)

A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement

IEEE Access
In this study, SiGe channel nanosheet field-effect transistor (NSFET) with a novel channel release stopping layer (CRSL), namely CRSL-SiGe NSFET, is proposed to addresses the issue of sub-fin recess during channel release in conventional SiGe (C-SiGe ...
Yan Li, Jiayi Zhang, Haoyan Liu, Yongliang Li   +3 more
doaj   +1 more source

A new resonant circuit for 2.45 GHz LC VCO with linear frequency tuning [PDF]

, 2011
A new MOS varactor bank is proposed to implement a 2.45 GHz SiGe BiCMOS LC-tank voltage controlled oscillator (VCO) with linear frequency tuning. Compared to a conventional VCO, the proposed technique improves the quality factor of the LC-tank while ...
Dinc, Tolga, Dinç, Tolga, Gurbuz, Yasar, Gürbüz, Yaşar, Tasdemir, Ferhat, Taşdemir, Ferhat, Zihir, Samet   +6 more
core  

ANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTURE

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the ...
O. I. Velichko, V. V. Aksenov
doaj  

Identification of the primary sensitizing mite (dominant mite) in patients with allergic respiratory disease sensitized to Dermatophagoides pteronyssinus and Lepidoglyphus destructor

World Allergy Organization Journal
Objective: To identify the dominant mite in patients with allergic respiratory disease (ARD) and double sensitization to Dermatophagoides pteronyssinus (Dpt) and Lepidoglyphus destructor (Ld).
José Arias-Irigoyen, MD, Irene Arias-Talavera, MD, Manuel Lombardero, PhD, Agustín Galán, BSc, Rafael I. Monsalve, PhD   +4 more
doaj   +1 more source

Associations of Protein Classes With Cross-Reactivity and Cross-Sensitization in Furry Animal Allergens: A Component-Resolved Diagnostics Study

Journal of Asthma and Allergy
Jiancai Lu,1,* Huiqing Zhu,2,* Qingqing Yang,1 Yunjian Xu,1 Zhifeng Huang,1 Baoqing Sun1 1Department of Clinical Laboratory, National Center for Respiratory Medicine, National Clinical Research Center for Respiratory Disease, State Key Laboratory
Lu J, Zhu H, Yang Q, Xu Y, Huang Z, Sun B   +5 more
doaj  

Scaling study of Si/SiGe MODFETs for RF applications [PDF]

, 2002
Based on the successful calibration on a 0.25 /spl mu/m strained Si/SiGe n-type MODFET, this paper presents a gate length scaling study of double-side doped Si/SiGe MODFETs.
Asenov, A., Barker, J.R., Hackbarth, T., Roy, S., Watling, J.R., Wilkins, R.C.W., Yang, L.   +6 more
core  

Structural and electronic properties of Si/Ge nanoparticles

, 2006
Results of a theoretical study of the electronic properties of (Si)Ge and (Ge)Si core/shell nanoparticles, homogeneous SiGe clusters, and Ge$|$Si clusters with an interphase separating the Si and Ge atoms are presented.
Abu Md. Asaduzzaman, Michael Springborg, V. L. Colvin   +2 more
core   +1 more source

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Frontiers in Materials, 2016
We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate.
Wei-Ting eLai, Kuo-Ching eYang, Po-Hsiang eLiao, Tom eGeorge, Pei-Wen eLi, Pei-Wen eLi   +5 more
doaj   +1 more source

Structure of the SigE regulatory network in Mycobacterium tuberculosis

Frontiers in Microbiology
SigE is one of the main regulators of mycobacterial stress response and is characterized by a complex regulatory network based on two pathways, which have been partially characterized in conditions of surface stress.
Laura Cioetto-Mazzabò, Davide Sorze, Fedora Babic, Francesca Boldrin, Greta Segafreddo, Roberta Provvedi, Riccardo Manganelli   +6 more
doaj   +1 more source

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Active and Passive Electronic Components, 2016
Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time.
Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin
doaj   +1 more source