Results 61 to 70 of about 109,382 (195)
Ge-rich SiGe heterostructures with superior crystal and photonic quality have been enabled via a thick linear graded SiGe buffer platform on Si. Nevertheless, due to a very low refractive index contrast between the Ge-rich SiGe heterostructures and the ...
N. Khongpetch +3 more
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BackgroundCross-reactive carbohydrate determinant (CCD) structures found in plant and insect glycoproteins are commonly recognized by IgE antibodies as epitopes that can lead to extensive cross-reactivity and obscure in vitro diagnostic (IVD) serology ...
Edsel Sinson +7 more
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Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while
Amin Nozariasbmarz +7 more
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Comparative study of clinical symptoms of chronic rhinosinusitis with nasal polyps patients
Aim The aim of this study is to explore the clinical characteristics in chronic rhinosinusitis with nasal polyps (CRSwNP) patients with different serum specific IgE (SIgE) and eosinophilic granulocyte infiltration status.
Jingmin Hu, Le Wang, Ruixia Ma
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Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of ...
A Yagi +21 more
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Pratica 2 de SIGE, referente al Máster en Ingenieria Informática de la UGR.
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Donor complex formation due to a high-dose Ge implant into Si [PDF]
To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized.
Gupta, Ashawant +3 more
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Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials.
David J. Rowe, Uwe R. Kortshagen
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Metallic behavior in Si/SiGe 2D electron systems
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened ...
A. Gold +3 more
core +1 more source
Substrate orientation and alloy composition effects in n-type SiGe quantum cascade structures [PDF]
We show using a theoretical self-consistent effective mass/rate equation approach that n-type SiGe-based quantum cascade lasers are potentially made viable by either using the (111) orientation or a Ge-rich ...
Evans, C.A. +4 more
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