Results 61 to 70 of about 109,382 (195)

FDTD analysis of optical integration between SiGe waveguides and Ge-rich SiGe heterostructures on graded buffer for quantum-confined Stark effect optical modulators

open access: yesResults in Optics
Ge-rich SiGe heterostructures with superior crystal and photonic quality have been enabled via a thick linear graded SiGe buffer platform on Si. Nevertheless, due to a very low refractive index contrast between the Ge-rich SiGe heterostructures and the ...
N. Khongpetch   +3 more
doaj   +1 more source

Cross-reactive carbohydrate determinant interference in cellulose-based IgE allergy tests utilizing recombinant allergen components.

open access: yesPLoS ONE, 2020
BackgroundCross-reactive carbohydrate determinant (CCD) structures found in plant and insect glycoproteins are commonly recognized by IgE antibodies as epitopes that can lead to extensive cross-reactivity and obscure in vitro diagnostic (IVD) serology ...
Edsel Sinson   +7 more
doaj   +1 more source

Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

open access: yesAPL Materials, 2016
Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while
Amin Nozariasbmarz   +7 more
doaj   +1 more source

Comparative study of clinical symptoms of chronic rhinosinusitis with nasal polyps patients

open access: yesImmunity, Inflammation and Disease, 2023
Aim The aim of this study is to explore the clinical characteristics in chronic rhinosinusitis with nasal polyps (CRSwNP) patients with different serum specific IgE (SIgE) and eosinophilic granulocyte infiltration status.
Jingmin Hu, Le Wang, Ruixia Ma
doaj   +1 more source

Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

open access: yes, 1999
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of ...
A Yagi   +21 more
core   +1 more source

Prática SIGE

open access: yes, 2023
Pratica 2 de SIGE, referente al Máster en Ingenieria Informática de la UGR.
openaire   +1 more source

Donor complex formation due to a high-dose Ge implant into Si [PDF]

open access: yes, 1994
To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized.
Gupta, Ashawant   +3 more
core   +1 more source

Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

open access: yesAPL Materials, 2014
Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials.
David J. Rowe, Uwe R. Kortshagen
doaj   +1 more source

Metallic behavior in Si/SiGe 2D electron systems

open access: yes, 2005
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by screened ...
A. Gold   +3 more
core   +1 more source

Substrate orientation and alloy composition effects in n-type SiGe quantum cascade structures [PDF]

open access: yes, 2008
We show using a theoretical self-consistent effective mass/rate equation approach that n-type SiGe-based quantum cascade lasers are potentially made viable by either using the (111) orientation or a Ge-rich ...
Evans, C.A.   +4 more
core   +1 more source

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