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III-Vs Review, 2003 Some of the next articles are maybe not open access.
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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices
Applied Physics Letters, 2002The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in
Scott T. Huxtable +9 more
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Radiation emission from wrinkled SiGe/SiGe nanostructure
Applied Physics Letters, 2010Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity
Fedorchenko, A. I. +3 more
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SiGe nano-heteroepitaxy on Si and SiGe nano-pillars
Nanotechnology, 2018In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars.
Mastari, M +10 more
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Noise in Si/SiGe and Ge/SiGe MODFET
SPIE Proceedings, 2004The progress of SiGe strained layer heteroepitaxy on virtual buffer substrates has opened up the opportunities for Si-based n- and p-channel HFETs with excellent RF performance. These devices have been reached outstanding high frequency figures of merit with fMAX of 188 GHz and 135 GHz, for the n-HFET and the p-HFET, respectively.
Frederic P. Aniel +6 more
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2017
The Subnikov-de Haas oscillations have been investigated in a two-dimensional hole gas in pure germanium quantum well in SiGe/Ge/SiGe heterostructure with the hole concentration p(H) 5,68??10???? ?????? and mobility ??= 4,68??10??? ?????? ?????????????????? in magnetic fields up to 15 T and the temperature range from 40 mK to 4 K.
Mironov, O.A. +2 more
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The Subnikov-de Haas oscillations have been investigated in a two-dimensional hole gas in pure germanium quantum well in SiGe/Ge/SiGe heterostructure with the hole concentration p(H) 5,68??10???? ?????? and mobility ??= 4,68??10??? ?????? ?????????????????? in magnetic fields up to 15 T and the temperature range from 40 mK to 4 K.
Mironov, O.A. +2 more
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High speed Si/SiGe and Ge/SiGe MODFETs
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers., 2003The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
F. Aniel +7 more
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2009
Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
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Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
openaire +1 more source