Results 161 to 170 of about 6,460 (218)

A reconfigurable non-linear active metasurface for coherent wave down-conversion. [PDF]

Nat Commun
Sanjari P, Aflatouni F.
europepmc   +1 more source

An optimized DCO with modified binary-weighted DCTLs based hybrid tuning banks for an E-band DPLL. [PDF]

Sci Rep
Tang L, Yu Z, Lu Y, Jin Z, Xia S, Zhang Y, Tang X.   +6 more
europepmc   +1 more source

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SiGe BiCMOS Technology Collaboration

New Electronics, 2021
X-FAB and IHP have announced a major industry-academic partnership.
openaire   +1 more source

SiGe BiCMOS X-Band integrated radiometer

2008 15th IEEE International Conference on Electronics, Circuits and Systems, 2008
The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.
DUCATI, Fabio, MAZZANTI, Andrea, BORGARINO, Mattia, M. Pifferi   +3 more
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(Invited) SiGe BiCMOS for Optoelectronics

ECS Transactions, 2016
Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on "Photonic BiCMOS", a new monolithic ePIC
Dieter Knoll, Stefan Lischke, Ahmed Awny, Lars Zimmermann   +3 more
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Half-Terahertz SiGe BiCMOS technology

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012
This paper addresses the integration of a new generation of high-speed SiGe HBTs with f T / f max of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral
H. Rucker, B. Heinemann, A. Fox
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High Performance SiGe BiCMOS Technology

IEEE/ACES International Conference on Wireless Communications and Applied Computational Electromagnetics, 2005., 2005
In this paper, we have reviewed SiGe BiCMOS technology and future map. In addition, we have seen that performance of today's 0.18 /spl mu/m production foundry process with Ft of 150 GHz and Fmax of 200 GHz is approaching performance levels required to address not only RF applications but also emerging applications in the mm-wave through several circuit
M. Racanelli, S. Voinegescu, P. Kemp
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High-Speed SiGe BiCMOS Technologies and Circuits

Selected Topics in Electornics and Systems, 2017
This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the evolution of complex BiCMOS technologies.
Pedro Rito, Klaus Schmalz
exaly   +2 more sources

Excess noise modelling of SiGe BiCMOS devices

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2002
This paper presents an exhaustive characterization of the low frequency noise behavior of SiGe HBT which is used to locate the 1/f noise sources within the device. We demonstrate that 1/f noise sources are present at the emitter base junction, at the collector terminal and at the base and emitter resistance.
Ibarra J., Vescovi D., Bary L., Borgarino M., Kovacic S., Lafontaine H., Graffeuil J., Plana R.   +7 more
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Highly-integrated SiGe BiCMOS WCDMA transmitter IC

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2003
A highly-integrated SiGe BiCMOS WCDMA transmitter IC consists of VHF, UHF chains, and synthesizers. At 6 dBm output power, it consumes 79 mA at 2.7 V, with a 5% r.m.s. EVM and -42 dBc ACLR at 5 MHz offset. In-band and receive-band output noise are -128 and -135 Bm/Hz, respectively.
A. Bellaouar, M. Frechette, A.R. Fridi, S.H.K. Embabi   +3 more
openaire   +1 more source