Results 171 to 180 of about 6,460 (218)

SiGe BiCMOS Trends ¿Today and Tomorrow

IEEE Custom Integrated Circuits Conference 2006, 2006
High performance communications applications have made technology choices more important than ever. Silicon Germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market.
J. Dunn, D. Harame, A. Joseph, S. St. Onge, N. Feilchenfeld, L. Lanzerotti, B. Orner, E. Gebreselasie, J. Johnson, D. Coolbaugh, R. Rassel, M. Khater   +11 more
openaire   +1 more source

SiGe BiCMOS technology for communication products

Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2004
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of >200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 /spl mu/m CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire-line circuit examples are also provided.
M. Racanelli, P. Kempf
openaire   +1 more source

Advances in SiGe HBT BiCMOS technology

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004., 2005
Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz.
A. Joseph, L. Lanzerotti, X. Liu, D. Sheridan, J. Johnson, Q. Liu, J. Dunn, J.-S. Rieh, D. Harame   +8 more
openaire   +1 more source

Fully-integrated WCDMA SiGE BiCMOS transceiver

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005., 2005
This paper describes a WCDMA transceiver integrated and in a SiGe-C 0.25um BiCMOS process featuring Ft=60GHz bipolar transistor. The receiver part includes integrated zero-IF RF-Front-End. The transmitter is based on Variable IF architecture and includes a 64 dB gain control. All required PLL's and associated VCO's are also integrated.
B. Pellat, J.-P. Blanc, F. Goussin, D. Thevenet, S. Majcherczak, F. Reaute, D. Belot, P. Garcia, P. Persechini, P. Cerisier, P. Conti, P. Level, M. Kraemer, A. Granata   +13 more
openaire   +1 more source

SiGe HBT and BiCMOS technologies

IEEE International Electron Devices Meeting 2003, 2004
Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and BiCMOS devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than 200 GHz. Impurity-profile
openaire   +1 more source

�������������������� �������������������� SiGe BiCMOS ������������������ ������������������������ ������ �������������������� �������������� ��������������������������:

2009
Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
openaire   +1 more source

Noise properties in SiGe BiCMOS devices

1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401), 2003
This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier.
J. G. Tartarin, R. Plana, BORGARINO, Mattia, H. Lafontaine, M. Regis, O. Llopis, S. Kovacic   +6 more
openaire   +2 more sources

SiGe BiCMOS Technology and Devices

2018
This chapter reviews Silicon–Germanium Bicomplementary Metal–Oxide Semiconductor (SiGe BiCMOS) technology and its most significant applications. It provides a basic understanding of how SiGe devices achieve a performance advantage over traditional bipolar and CMOS devices.
openaire   +2 more sources

Radiated reliability for 0.35μm SiGe BiCMOS technology

2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2017
An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 μm SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a 60Co γ irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation.
Xue Wu, Wei Cui, Kunfeng Zhu, Yonghui Yang, Kaizhou Tan, Zhaohuan Tang   +5 more
openaire   +1 more source

A 240GHz Synthesizer in 55nm SiGe BiCMOS

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015
A 234-261GHz synthesizer with 2-4.9dBm output power and -105 dBc/Hz phase noise at 10MHz offset is fabricated in a production 55nm SiGe BiCMOS process with 330/350GHz HBT fT/fMAX. The circuit includes a 120GHz fundamental frequency VCO with 1.2V AMOS varactors, a broadband LO tree driving a divide-by- 128 chain and a doubler.
Stefan Shopov, Juergen Hasch, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu   +4 more
openaire   +1 more source