Results 181 to 190 of about 6,460 (218)

A 28GHz SiGe BiCMOS phase invariant VGA

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016
The paper describes a technique to design a phase invariant variable gain amplifier (VGA). Variable gain is achieved by varying the bias current in a BJT, while the phase variation is minimized by designing a local feedback network such that the applied base to emitter voltage has a bias-dependent phase variation which compensates the inherent phase ...
B. Sadhu, J. F. Bulzacchelli, A. Valdes-Garcia   +2 more
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Differential ECL/CML Synthesis for SiGe BiCMOS

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008
A novel SiGe ECL/CML design flow is presented for the first time. It provides CMOS-style synthesis with differential SiGe BiCMOS ECL standard cells. A first version works in a 95 GHz one-mask HBT technology up to about 10 GHz clock rate. A synthesized CML/ECL FIFO buffer example with 497 ECL gates works up to 3 GHz data rate.
Hans Gustat, Ulrich Jagdhold, Frank Winkler, Markus Appel, Gerald Kell   +4 more
openaire   +1 more source

Millimeter-wave beamforming circuits in SiGe BiCMOS

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010
Integrated millimeter-wave 2 bit and 3 bit phase shifters and 4 channel beamforming network are presented in this paper. The 2 bit phase shifter exhibits 4° RMS phase error and a RMS gain error < 1 dB. In the 55–67 GHz range, the 3 bit phase shifter shows RMS phase error < 7° and a RMS gain error < 1 dB.
Mohamed Elkhouly, Chang-Soon Choi, Srdjan Glisic, Christoph Scheytt, Frank Ellinger   +4 more
openaire   +1 more source

A 220GHz LNA in SiGe BiCMOS process

2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2020
This paper presents a 220GHz LNA in SiGe BiCMOS technology. Four stage Cascode topology is chosen for this circuit. The amplifier takes advantage of microstrip transmission line to realize the inductive passive device. The circuit was implemented in 0.13 μm SiGe BiCMOS process with f T /f max of 240/280GHz. The simulation results show that the LNA has
Xiang Zhong, Qin Li, Leijun Xu
openaire   +1 more source

30GHz Amplifiers with 0.25¿m SiGe BiCMOS

2007 14th IEEE International Conference on Electronics, Circuits and Systems, 2007
In this paper the possibility of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30 GHz is discussed. Spiral inductors with SRF higher than 30 GHz, are not available at the foundry library. Accordingly, inductors with a SRF higher than 45 GHz were obtained, however their Q is only 5 at 30 GHz.
J.A. Torres, J.C. Vaz, J.C. Freire
openaire   +1 more source

SiGe BiCMOS manufacturing platform for mmWave applications

SPIE Proceedings, 2010
TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz f T /f MAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node ...
Arjun Kar-Roy, David Howard, Edward Preisler, Marco Racanelli, Samir Chaudhry, Volker Blaschke   +5 more
openaire   +1 more source

SiGe BiCMOS technologies for power amplifier applications

25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003., 2003
Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 /
J.B. Johnson, A.J. Joseph, D. Sheridan, R.M. Malladi   +3 more
exaly   +2 more sources

SiGe BiCMOS technology for mm-wave systems

2012 International SoC Design Conference (ISOCC), 2012
This paper reviews a 0.13 µm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies f max of 500 GHz, transit frequencies f T of 300 GHz, and CML ring oscillator gate delays of 2.0 ps. The HBTs exhibit breakdown voltages BV CEO of 1.6 V and BV CBO of 5.1 V.
H. Rucker, B. Heinemann
openaire   +1 more source

SiGe BiCMOS comparator for extreme environment applications

2015 IEEE Aerospace Conference, 2015
This paper presents a 90 nm SiGe BiCMOS comparator designed for extreme environment use. A unique circuit characteristic of this comparator topology is that it uses only one NMOS transistor in the circuit. The rest of the circuit is comprised of PMOS transistors and NPN HBTs in order to maintain radiation hardiness.
Benjamin Sissons, Alan Mantooth, null Jia Di, James A. Holmes, A. Matthew Francis   +4 more
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Applications Focused Trends In SiGe BiCMOS Technologies

ECS Meeting Abstracts, 2006
Abstract not Available.
Stephen St.Onge, Alvin Joseph, Louis Lanzerotti, Natalie Feilchenfeld, Douglas Coolbaugh, Bradley Orner, Jim Dunn, David Harame   +7 more
openaire   +1 more source