Results 191 to 200 of about 6,460 (218)
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ESD robustness of a BiCMOS SiGe technology
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2002High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed.
S. Voldman +15 more
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SiGe BiCMOS Technology for RF Circuit Applications
IEEE Transactions on Electron Devices, 2005SiGe BiCMOS is reviewed with focus on today's production 0.18-/spl mu/m technology at f/sub T//f/sub MAX/ of 150/200 GHz and future technology where device scaling is bringing about higher f/sub T//f/sub MAX/, as well as lower power consumption, noise figure, and improved large-signal performance at higher levels of integration.
M. Racanelli, P. Kempf
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SiGe BiCMOS High Linearity Mixers for Base-Station Applications
2008 European Microwave Integrated Circuit Conference, 2008This paper describes design issues related to high linearity SiGe BiCMOS active mixers, which are primarily targeted for WCDMA base-station applications. The effect of different mixer components to overall mixer dynamic range is described, and the measurement results from four different implementations are given to support this discussion.
Tero Tikka +4 more
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SiGe BicMOS Building Blocks for 5G Applications
2019Dottorato di Ricerca in Information and Communication Technologies, Ciclo ...
Calzona, Domenico +3 more
openaire +1 more source
2007
The present paper reports on a X-band PLO designed in a 0.35um SiGe BiCMOS low-cost technology. All blocks of the PLL are integrated in the same chip. The output power is about -7 dBm and the in-band and out-band phase noise resulted to be –75dBc/Hz at an offset frequency of 10kHz and –95dBc/Hz at an offset frequency of 500kHz, respectively.
PIFFERI, Marco +3 more
openaire +1 more source
The present paper reports on a X-band PLO designed in a 0.35um SiGe BiCMOS low-cost technology. All blocks of the PLL are integrated in the same chip. The output power is about -7 dBm and the in-band and out-band phase noise resulted to be –75dBc/Hz at an offset frequency of 10kHz and –95dBc/Hz at an offset frequency of 500kHz, respectively.
PIFFERI, Marco +3 more
openaire +1 more source
SiGe BiCMOS Technology for Communication Systems
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002Marco Racanelli, Paul Kempf
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High-resistivity SiGe BiCMOS technology development
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014Anthony Stamper +14 more
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Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz
AIP Advances, 2019Klaus Schmalz +2 more
exaly
A 6-GHz Low-Power BiCMOS SiGe:C 0.25 $\mu$m Direct Digital Synthesizer
IEEE Microwave and Wireless Components Letters, 2008Éric Tournier, Andreia Cathelin
exaly