Results 41 to 50 of about 18,108 (296)

A Study on Thermal Expansion and Thermomechanical Behavior of Composite Metal Foams

Advanced Engineering Materials, EarlyView.
The coefficient of thermal expansion of steel–steel composite metal foam (S‐S CMF) is shown to be lower than that of bulk stainless steel while its performance under compression demonstrate excellent mechanical stability and strength at all temperatures with gradualsoftening from 400 to 600 °C.
Zubin Chacko, Nigel Amoafo Yeboah, Afsaneh Rabiei   +2 more
wiley   +1 more source

Hyperuniform disordered waveguides and devices for near infrared silicon photonics

Scientific Reports, 2019
We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform ...
Milan M. Milošević, Weining Man, Geev Nahal, Paul J. Steinhardt, Salvatore Torquato, Paul M. Chaikin, Timothy Amoah, Bowen Yu, Ruth Ann Mullen, Marian Florescu   +9 more
doaj   +1 more source

Recent Progress on 2D‐Material‐Based Smart Textiles: Materials, Methods, and Multifunctionality

Advanced Engineering Materials, EarlyView.
Advancements in 2D‐material‐integrated smart textiles are reviewed, with a focus on materials, fabrication methods, and multifunctional applications, including energy harvesting, monitoring, EMI shielding, energy storage, and thermal management. The discussion addresses key challenges and provides insights into the future development of next‐generation
Yong Choi, Jiheon Kim, Jaemin Lee, Xinqi Chen, Byungseok Seo, Wonjoon Choi   +5 more
wiley   +1 more source

Covalently‐Bonded Diaphite Nanoplatelet with Engineered Electronic Properties of Diamond

Advanced Functional Materials, EarlyView.
A novel approach to engineering the electronic properties of diamond is reported on the diaphite nanoplatelet consisting of (11¯${{\bar{1}}}$1) planes of diamond nanoplatelet covalently bonded with graphite (0001) planes. The strong sp3/sp2‐hybridized interfacial covalent bonding induces the electron transfer from diamond to graphite, resulting in a ...
Zhaofeng Zhai, Chuyan Zhang, Bin Chen, Ying Xiong, Yan Liang, Lusheng Liu, Bing Yang, Nianjun Yang, Xin Jiang, Nan Huang   +9 more
wiley   +1 more source

Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

Applied Physics Express
Drag between the electron and the hole layers formed in a silicon-on-insulator MOSFET, with the estimated interlayer distance as small as 18 nm, is investigated.
Nabil Ahmed, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono   +4 more
doaj   +1 more source

All-Optical Wavelength Multicasting in Quadruple Resonance-Split Coupled Silicon Microring Cavity

IEEE Photonics Journal, 2018
We demonstrate an all-optical four-channel wavelength multicasting in a coupled silicon microring resonator system. The scheme is based on two-photon-absorption-induced free carrier dispersion in silicon.
Awanish Pandey, Shankar Kumar Selvaraja
doaj   +1 more source

Exploring Dipolar Dynamics and Ionic Transport in Metal‐Organic Frameworks: Experimental and Theoretical Insights

Advanced Functional Materials, EarlyView.
In this study, the interplay of dipolar dynamics and ionic charge transport in MOF compounds is investigated. Synthesizing the novel structure CFA‐25 with integrated freely rotating dipolar groups, local and macroscopic effects, including interactions with Cs cations are explored.
Ralph Freund, Arthur Schulz, Peter Lunkenheimer, Maryana Kraft, Thomas Bergler, Harald Oberhofer, Dirk Volkmer   +6 more
wiley   +1 more source

Lasing in silicon–organic hybrid waveguides

Nature Communications, 2016
On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with
Dietmar Korn, Matthias Lauermann, Sebastian Koeber, Patrick Appel, Luca Alloatti, Robert Palmer, Pieter Dumon, Wolfgang Freude, Juerg Leuthold, Christian Koos   +9 more
doaj   +1 more source

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

IEEE Journal of the Electron Devices Society, 2019
A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj   +1 more source

SOI Technology:An Opportunity for RF Designers?

Journal of Telecommunications and Information Technology, 2023
This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for highfrequency (reaching cutoff frequencies close to 500 GHz forn-MOSFETs) and for harsh environments (high temperature,radiation) commercial ...
Jean-Pierre Raskin
doaj   +1 more source