Results 41 to 50 of about 47,863 (340)

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

Reflectionless grating coupling for silicon-on-insulator integrated circuits [PDF]

, 2011
We propose a novel grating coupler design which is inherently reflectionless by focusing the reflected light away from the entrance waveguide.
Baets, Roel, Bogaerts, Wim, De Koninck, Yannick, Lambert, Emmanuel, Li, Yanlu, Roelkens, Günther, Vermeulen, Diedrik   +6 more
core   +1 more source

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

On-dimensional off-chip beam steering and shaping using optical phased arrays on silicon-on-insulator [PDF]

, 2011
Optical beam steering can find applications in several domains such as laser scanning, LiDAR (Light Detection And Ranging), wireless data transfer and optical switches and interconnects.
Karel Van Acoleyen, Katarzyna Komorowska, Roel Baets, Student Member, Wim Bogaerts   +4 more
core   +2 more sources

Exploring Dipolar Dynamics and Ionic Transport in Metal‐Organic Frameworks: Experimental and Theoretical Insights

Advanced Functional Materials, EarlyView.
In this study, the interplay of dipolar dynamics and ionic charge transport in MOF compounds is investigated. Synthesizing the novel structure CFA‐25 with integrated freely rotating dipolar groups, local and macroscopic effects, including interactions with Cs cations are explored.
Ralph Freund, Arthur Schulz, Peter Lunkenheimer, Maryana Kraft, Thomas Bergler, Harald Oberhofer, Dirk Volkmer   +6 more
wiley   +1 more source

High-Power-Compatible Thick Silicon-on-Insulator Waveguide: An Implementation in Optical Phased Array

IEEE Photonics Journal
High-power transmission capability is a critical yet insufficiently explored frontier in integrated photonics. Owing to the restricted optical cross-sectional area of the 220 nm-thick silicon layer, conventional SOI platform is incapable of managing the ...
Jingsi Chen, Daixin Lian, Shi Zhao, Zhituo Chen, Yongqi Ye, Jingye Chen, Yaocheng Shi   +6 more
doaj   +1 more source

Porous Silicon on Insulator Technology

Journal of Scientific Research and Reports, 2022
In this research, the structure, optical, and electrical properties of porous silicon prepared by electrochemical etching at current density 50 mA /cm2 with etching time 10 min, before and after rapid thermal oxidation process (RTO) at different oxidation temperature from (500-700) Ċ and constant oxidation time 60 s.  Under optimum conditions, the pore
openaire   +1 more source