Results 211 to 220 of about 3,837 (261)

High voltage silicon-on-insulator (SOI) MOSFETs

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs, 2002
Novel lateral high-voltage SOI MOSFETs capable of withstanding up to 400 V are presented. The design optimization, fabrication, and experimental results obtained for these devices are presented. The devices can be implemented using a CMOS-SOI compatible process.
Q. Lu, P. Ratnam, C.A.T. Salama
openaire   +1 more source

Transient performance of Silicon-On-Insulator (SOI) Phase Modulator

AIP Conference Proceedings, 2011
Silicon as a photonic medium has a unique advantages. It is transparent in the range of optical telecommunications wavelengths (1.3 and 1.55µm) and has a high index of refraction, which allows for the fabrication of high-index-contrast submicrometer structures.
A. R. Hanim, H. Hazura, B. Mardiana, Sahbudin Shaari, P. S. Menon, Abdul Manaf Hashim, Vijay K. Arora   +6 more
openaire   +1 more source

Electrical activation of arsenic implanted in silicon on insulator (SOI)

Journal of Physics D: Applied Physics, 2007
Electrical activation of arsenic implanted in silicon on insulator (SOI) was studied. Two SOI structures with different Si overlayers and buried oxide thicknesses were used in this work. The As+ implantations were performed with a single energy of 20 keV to doses of 5 × 1014 cm−2 or 2 × 1015 cm−2 in both substrates.
R M de Oliveira, M Dalponte, H Boudinov
openaire   +1 more source

Multimode Interference (MMI) Couplers in SOI (Silicon-on-insulator)

Integrated Photonics Research, 1995
Silicon based integrated optics is attracting an increasing amount of interest due to low inherent loss at 1.3 μm and 1.5 μm and to the potential for transforming VLSI techniques from microelectronics to integrated optics. Different schemes for waveguides based on silicon technology have been proposed and examined [1-3]. Kurdi et al.
Thomas Zinke, Uwe Fischer, Klaus Petermann   +2 more
openaire   +1 more source

Stress-induced birefringence in silicon-on-insulator (SOI) waveguides

SPIE Proceedings, 2004
We show that stress engineering can be used to adjust the SOI waveguide birefringence to the stringent polarization tolerances expected of commercial devices, using only standard silicon processes. With decreasing device dimensions and high index contrast the waveguide birefringence becomes increasingly sensitive to device geometry.
Winnie N. Ye, Dan-Xia Xu, Siegfried Janz, Pavel Cheben, Andre Delage, Marie-Josee Picard, Boris Lamontagne, N. Garry Tarr   +7 more
openaire   +1 more source

Development of small silicon modulators in silicon-on-insulator (SOI)

SPIE Proceedings, 2003
Silicon-based optical modulators are expected to be important components in some optical networks. The optical modulation mechanism can be achieved either via the plasma dispersion effect, or by thermal means. Both are relatively slow processes when utilized in large (multi micron) waveguide structures, which researchers tend to concentrate on for ease
Ching Eng Png, Graham T. Reed, Ragheid M. Atta, Graham J. Ensell, Alan G. R. Evans   +4 more
openaire   +1 more source

The future of silicon-on-insulator (SOI) technology in microelectronic systems

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2005
After many years of materials development and circuit research, silicon-on-insulator (SOI) technology clearly has become a viable approach for high performance microelectronics. As semiconductor technology continues to scale, the value of an SOI materials platform continues to expand.
Z.J. Lemnios, D.J. Radack, J.C. Zolper
openaire   +1 more source

Electrical characteristics of silicon-on-insulator (SOI) phase modulator

2011 IEEE Regional Symposium on Micro and Nano Electronics, 2011
This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss.
Hanim Abdul Razak, Hazura Haroon, Mardiana Bidin, Wan Maisarah Mukhtar, ZulAtfyi Fauzan Mohammed Napiah, P. Susthitha Menon   +5 more
openaire   +1 more source

Reflections in Silicon on Insulator (SOI) Waveguides and Ring Resonators

Integrated Photonics Research and Applications/Nanophotonics, 2006
Unwanted reflections in SOI waveguides are investigated. In a typical waveguide, 2.5 % of the propagation loss is actually being reflected backwards. Unless corrected, this leads to artifacts in the performance of ring resonator devices.
S. J. Spector, T. M. Lyszczarz, M. W. Geis, J. Yoon, D. M. Lennon, S. Deneault   +5 more
openaire   +1 more source

Ultrathin Silicon-an-Insulator (SOI) Wafer for Compliant Substrate

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017
Compliant substrate is one of the most promising approaches for heteroepitaxy of the semiconductor devices. SOI wafer is the only commercial structure used for the compliant substrate researches. Yet, previous studies reported ineffectiveness of SOI as a compliant substrate for thickness regions above 10 nm.
Shinyoung Noh, Anita Ho-Baillie, Stephen Bremner, Martin A. Green, Xiaojing Hao   +4 more
openaire   +1 more source