Results 221 to 230 of about 3,837 (261)

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006
A novel partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with a T-shaped body (TSB) is proposed for the first time. Simulation results demonstrate that the proposed structure provides nano-scaled PD SOI devices with much better short channel effect immunity and sub-threshold characteristics than those of UTB SOI devices.
Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, Shengdong Zhang   +5 more
openaire   +1 more source

Basics of Silicon-on-Insulator (SOI) Technology

2004
Silicon is by far the most widely used semiconductor material. It is abundant in earth’s crust and relatively easy to convert into a high-purity single crystal. Unlike some other semiconductor materials silicon is stable when heated at high temperature, and a well-behaved insulating and passivating material, silicon dioxide, can readily be grown on it.
openaire   +1 more source

Silicon-on-insulator (SOI) wafer fabrication for MEMS applications

SPIE Proceedings, 2003
In this paper, it is shown that Silicon-On-Insulator (SOI) wafers with good surface finish and thickness control can be realized using Silicon Fusion Bonding along with an optimized ethylenediamine-pyrocatechol-water (EDP) etching approach. Single crystal diaphragms of 11 μm thickness have been fabricated using these SOI wafers.
Bhimanadhuni R. KotiReddy, Parimi R. Rao, Amitava DasGupta, Kunchinadka N. H. Bhat   +3 more
openaire   +1 more source

Overview of fully depleted silicon-on-insulator (SOI) technology

Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488), 2004
This paper examines the advantages and disadvantages of thin-film, fully depleted (FD) silicon-on-insulator (SOI) technology devices compared to bulk devices, describing their desirability and suitability for low-voltage and low-power very large-scale integrated (VLSI) circuits.
openaire   +1 more source

An Optical Board Approach Based on SOI (silicon-on-insulator)

2007 9th International Conference on Transparent Optical Networks, 2007
An optical board technology consisting of SOI (silicon-on-insulator) based rib-waveguides and hybrid integration of active III/V components is presented. The use of SOI as the material base for an optical motherboard offers specific advantages, such as well know processing using standard equipment for board fabrication.
Jurgen Bruns, Torsten Mitze, Lars Zimmermann, Karsten Voigt, Martin Schnarrenberger, Klaus Petermann   +5 more
openaire   +1 more source

A seeded-channel silicon-on-insulator (SOI) MOS technology

IEEE Electron Device Letters, 1985
An improved silicon-on-insulator (SOI) MOSFET transistor structure is presented. The structure retains the density and low-capacitance advantages of SOI, but places the transistor channel region in the single-crystal silicon substrate. This "seeded-channel" configuration avoids floating-body effects and ensures that defects in the SOI will not affect ...
W. Baerg, J.C. Sturm, T.L. Hwa, H.Y. Lin, B.B. Siu, C.H. Ting, J.C. Tzeng, J.F. Gibbons   +7 more
openaire   +1 more source

Laser Processing in Silicon on Insulator (SOI) Technologies

1984
Silicon on insulator (SOI) technologies are an attractive alternative for VLSI circuit manufacturing, owing to such advantages as reduced parasitic capacitances, latch-up immunity and insensitivity to alpha particles. SOI technologies may be also viewed as a first but necessary step towards 3-D integration.
openaire   +1 more source

Silicon-on-insulator SOI as a photonics platform

2005
12th International Symposium on SOI Technology and Devices, May 2005, Quebec ...
Xu, D-X, Delâge, André, Cheben, Pavel, Lamontagne, Boris, Janz, Siegfried, Ye, W.   +5 more
openaire   +1 more source

Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)

2009 International Semiconductor Conference, 2009
The typical electrical properties of triple-gate SOI MOSFETs are investigated. The relationship between the short-channel effect (SCE) and the inter-gate coupling effect is studied as a function of the channel length and width. The three-dimensional coupling effect due to electric field penetration from substrate to channel, from source and drain to ...
Bae Y., Na K.-I., Cristoloveanu S., Xiong W., Cleavelin C.R., Lee J.-H.   +5 more
openaire   +1 more source

MOS-controlled diode (MCD) on silicon-on-insulator (SOI)

IECON'03. 29th Annual Conference of the IEEE Industrial Electronics Society (IEEE Cat. No.03CH37468), 2004
The performance of the diode is an importance factor in achieving good efficiency for a power integrated circuit. In this paper, a MOS-controlled diode (MCD) for power integrated circuits is presented. The proposed structure utilizes active control to switch the diode between unipolar and bipolar operating modes so that the device can operate at its ...
openaire   +1 more source