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Transport Spectroscopy of a Quantum Dot in a Silicon-on-Insulator (SOI) MOSFET
Journal of the Korean Physical Society, 2007We report transport spectroscopy in a gate-induced quantum dot (QD) based on a silicon-oninsulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET). The differential conductance G measurement in the large voltage region shows small conductance peaks, which reveal single-electron tunnelling through exited quantum states of the QD.
D. Ahn +5 more
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Process and Simulation design of Silicon-On-Insulator (SOI) NMOS
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 2023Zih-Fei Chen +4 more
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Extreme-submicrometer silicon-on-insulator (SOI) MOSFETs.
1994Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994. ; Includes bibliographical references (leaves 200-213). ; by Lisa T. Su. ; Ph.D.
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Silicon-on-insulator (SOI) nanowire hot carrier electroluminescence
2014 IEEE Photonics Conference, 2014Monuko du Plessis, Petrus J. Venter
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SOI (Silicon-on-insulator)—materials and devices
Microelectronics Reliability, 1997openaire +1 more source
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2009
Bernd O Kolbesen
exaly
Bernd O Kolbesen
exaly